A method for making a bandpass filter including a first and second bulk acoustic wave resonators, the resonant frequency of the second resonator being offset from that of the first resonator by a predetermined offset, the method including providing a piezoelectric on insulator substrate, forming a lower electrode of the first resonator and a lower electrode of the second resonator, assembling by bonding the donor substrate to a receiver substrate, removing the donor substrate with a barrier on the piezoelectric layer, forming an upper electrode of the first resonator and an upper electrode, forming the lower electrodes being preceded by forming a mass overload pattern at the second zone, and/or forming the upper electrodes being preceded by forming a mass overload pattern at the second zone, the total thickness of the mass overload pattern or patterns being chosen to offset the resonant frequency of the second resonator by the offset.

A method of manufacturing a piezoelectric vibrator element, a piezoelectric vibrator element, and a piezoelectric vibrator, superior in vibration characteristics, high in quality, and capable of suppressing a variation in frequency after a frequency adjustment, are provided. The method includes a first frequency adjustment step of performing ion milling on a weight metal film for a frequency adjustment formed on a surface of a tip part in each of a pair of vibrating arm parts, and a second frequency adjustment step of performing ion milling on the weight metal film at a lower etch rate than in the first frequency adjustment step after the first frequency adjustment step.

A bulk acoustic wave (BAW) resonator includes a substrate defining a cavity, a bottom electrode disposed over the substrate and the cavity, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. The piezoelectric layer includes polycrystalline lithium niobate (LN) material or polycrystalline lithium tantalite (LT) material. The BAW resonator may further include an encapsulant layer formed on side and top surfaces of the piezoelectric layer. The encapsulant layer is configured to protect the LN material or the LT material of the piezoelectric layer from a release solvent previously applied to sacrificial material within the cavity in the substrate.

Techniques for improving acoustic wave devices are disclosed, including filters, oscillators and systems that may include such devices. A first piezoelectric layer having a piezoelectrically excitable resonance mode may be provided. A second piezoelectric layer may also be provided. The first piezoelectric layer and the second piezoelectric layer may have respective thicknesses so that the acoustic wave device has a resonant frequency. A temperature compensating layer may be included. A substrate may be provided.

A micro-structured device that can improve sensitivity and signal-to-noise for electronic sensor materials is embedded in electrically resistive materials. The technology includes a three-dimensional embedded electrode structure and fabrication methods for making the device for electronic sensing in bulk resistive materials. Embedded electrode structures address issues in conventional sensors by allowing independent control of sensitive material thickness, area, electric field intensity, and field direction.

This piezoelectric wafer has: a piezoelectric vibration piece; a frame portion that supports the piezoelectric vibration piece; and a coupling portion that couples the piezoelectric vibration piece to the frame portion. A pair of first and second metal bumps is formed in juxtaposition on the piezoelectric vibration piece. The coupling portion has slits extending in its width direction except in a bridge, i.e., a part of the coupling portion in its width direction. An end in the width direction of the bridge is distantly spaced from the first and second metal bumps both in a direction perpendicular to the width direction of the coupling portion with no overlap with these metal bumps.

This piezoelectric wafer has: a piezoelectric vibration piece; a frame portion that supports the piezoelectric vibration piece; and a coupling portion that couples the piezoelectric vibration piece to the frame portion. The piezoelectric vibration piece is broken off at the coupling portion and separated from the piezoelectric wafer. On front and back surfaces of the coupling portion, grooved slits extending along a width direction of the coupling portion are formed except for parts of the coupling portion in the width direction. An electrode on at least one of front and back surfaces of the piezoelectric vibration piece is extracted to a frame-portion side of the piezoelectric wafer by way of the part of the coupling portion in the width direction.

An acoustic wave filter includes a substrate having voids formed therein; a first resonator disposed on one or more of the voids, and a second resonator disposed on other of the voids. A first trimming layer is provided in the first resonator, and a second trimming layer is provided in the second resonator. The second trimming layer is formed of a material having an etching rate for a given etchant different from that of the first trimming layer.

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.