A vibrator device includes a vibration element including a vibration portion and a fixed portion, a supporting member to which the fixed portion is attached to support the vibration element, and a first substrate to which the supporting member is attached, the supporting member includes a attaching portion attached to the first substrate, and A1≥A2 is satisfied in a case where an area of a rectangular region including the fixed portion is A1 and an area of a rectangular region including the attaching portion is A2 in a plan view seen from a thickness direction of the vibration element.

A resonator element includes: a substrate; and an electrode that includes a first conductive layer provided on a surface of the substrate, and a second conductive layer, provided on the opposite side to the first conductive layer on the substrate side, which is disposed within an outer edge of the first conductive layer when seen in a plan view from a direction perpendicular to the surface.

A resonator device includes a base substrate that is formed of a single crystal semiconductor and includes a first surface, a resonator element attached to the first surface of the base substrate, and a cover that is bonded to the first surface of the base substrate, accommodates the resonator element between the cover and the base substrate, and is formed of a single crystal semiconductor. The base substrate and the cover are bonded through an amorphous layer.

A vibration device includes a semiconductor substrate having a first surface and a second surface in an obverse-reverse relationship, a vibration element disposed on the first surface, a lid bonded to the first surface, an integrated circuit disposed on the first surface, a terminal disposed on the second surface, a through electrode which penetrates the semiconductor substrate, and is configured to electrically couple the terminal and the integrated circuit to each other, and a first capacitor which is provided with a first recess provided to the semiconductor substrate and opening in the first surface, an insulating film disposed on an inside surface of the first recess, and an electrically-conductive material filling the first recess, and has a first capacitance between the electrically-conductive material and the semiconductor substrate, wherein the electrically-conductive material does not have contact with the terminal at the second surface side.

An integrated circuit apparatus includes a pad via which an AC signal is inputted or outputted, a circuit that overlaps with the pad in the plan view, protective wiring provided between the pad and the circuit, and a resistor having one end electrically coupled to the protective wiring and another end electrically coupled to an electric charge discharging path.

A resonator device includes: a base including a semiconductor substrate; a resonator element; and a lid to be bonded to the base, the lid and the base forming a cavity for accommodating the resonator element. An integrated circuit is disposed at the semiconductor substrate, the integrated circuit including an oscillation circuit electrically coupled to the resonator element, a memory circuit configured to store a reference value of an output characteristic of the resonator element, and a determination circuit configured to compare a detection value of the output characteristic of the resonator element with the reference value and determine an airtight state inside the cavity based on a comparison result.

A resonator device includes: a resonator element; a heat generating unit; a first package including a first base at which the resonator element and the heat generating unit are disposed, and a first lid bonded to the first base so as to accommodate the resonator element between the first lid and the first base; and a high emissivity layer that is disposed at a surface of the heat generating unit on a first lid side and that has an emissivity higher than an emissivity of the surface. In addition, a constituent material of the surface is silicon, and the emissivity of the high emissivity layer at room temperature is 0.5 or more.

A resonator device includes: a resonator element; a heat generating unit; a first package including a first base at which the resonator element and the heat generating unit are disposed, and a first lid bonded to the first base so as to accommodate the resonator element between the first lid and the first base; and a low emissivity layer that is disposed at an inner surface of the first lid and that has an emissivity lower than an emissivity of the first lid. In addition, a constituent material of the first lid is silicon, and the emissivity of the low emissivity layer at room temperature is less than 0.5.

A doubts rotated quart/crystal resonator comprises a cantilever-mounted doubts rotated resonating element having a line of geometrical symmetry running from a supported end to a free end which is not perpendicular to the resonating element's crystallographic/axis. A method of manufacturing the crystal resonator comprises cutting a doubly rotated quartz crystal plate with x.sup.I and z.sup.I axes defining the plate's plane into one or more resonating elements at a non-zero degrees in-plane rotation angle in relation to the plate's x.sup.I axis. The resonator has reduced sensitivity to mechanical acceleration.

A vibrating element includes a base and a first vibrating arm and a second vibrating arm extending from the base. The first vibrating arm includes a first arm and a first weight. The second vibrating arm includes a second arm and a second weight. In the vibrating element, 0.952<M2/M1<1.000, wherein M1 is mass on the second vibrating arm side of the first weight with respect to a first center line of the first arm and mass on the first vibrating arm side of the second weight with respect to a second center line of the second arm and M2 is mass on a side opposite to the second vibrating arm of the first weight with respect to the first center line and mass on a side opposite to the first vibrating arm of the second weight with respect to the second center line.