Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a multi-layer mass loading strip. The mass loading strip has a density that is higher than a density of the temperature compensation layer. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can include a first layer for adhesion and a second layer for mass loading. The mass loading strip can suppress a transverse mode.

The present disclosure relates to acoustic wave devices, and particularly to high quality factor (Q) transducers for surface acoustic wave (SAW) devices. An exemplary SAW device includes an interdigital transducer (IDT) between two reflective gratings to form a resonator. The resonator operates through shear horizontal mode acoustic waves, and therefore suppression of transverse modes (parallel to electrode fingers of the IDT) is desired. A piston mode can be formed in the resonator to suppress transverse modes, which may also increase energy leakage and result in a lower Q. A higher Q is achieved by adding a fast region at an end of one or more of the electrode fingers of the IDT.

An acoustic wave device with a bent section is disclosed. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The bent section is arranged to create a curvature in a waveguide of the acoustic wave device to suppress a transverse spurious mode of the acoustic wave device.

The present disclosure relates to acoustic wave devices, and particularly to high quality factor (Q) transducers for surface acoustic wave (SAW) devices. An exemplary SAW device includes an interdigital transducer (IDT) between two reflective gratings to form a resonator. The resonator operates through shear horizontal mode acoustic waves, and therefore suppression of transverse modes (parallel to electrode fingers of the IDT) is desired. A piston mode can be formed in the resonator to suppress transverse modes, which may also increase energy leakage and result in a lower Q. A higher Q is achieved by adding a fast region at an end of one or more of the electrode fingers of the IDT.

Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material and an electrode structure. The electrode structure includes a first busbar and a second busbar. The electrode structure further includes electrode fingers arranged in an interdigitated manner and including a first plurality of fingers connected to the first busbar and a second plurality of fingers connected to the second busbar. A first distance between the first busbar and the second plurality of fingers and a second distance between the second busbar and the first plurality of fingers both being less than a pitch of the electrode fingers. The electrode fingers have a central region with a first trap region and a second trap region respectively located on boundaries of the central region. A structural characteristic of the electroacoustic device is different in the first trap region and the second trap region relative to the central region.

Aspects of the disclosure relate to an electroacoustic device that includes a piezoelectric material and an electrode structure. The electrode structure includes a first busbar and a second busbar. The electrode structure further includes a first conductive structure connected to the first busbar and a second conductive structure connected to the second busbar. The first conductive structure and the second conductive structure is disposed between the first busbar and the second busbar. The first conductive structure and the second conductive structure each include a plurality of conductive segments separated from each other and extending towards one of the first busbar or the second busbar. The electrode structure further includes electrode fingers arranged in an interdigitated manner and each connected to either the first conductive structure or the second conductive structure. The electrode fingers have a pitch that is different than a pitch of the plurality of conductive segments.

An acoustic wave device with a bent section is disclosed. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The bent section is arranged to create a curvature in a waveguide of the acoustic wave device to suppress a transverse spurious mode of the acoustic wave device.

Surface acoustic wave (SAW) structures with transverse mode suppression are disclosed. In one aspect, the SAW structure provides digits or fingers with broad interior terminal end shapes. By providing such shapes spurious modes above the resonance frequency of the SAW are suppressed thereby providing desired out of band rejection that helps satisfy design criteria such as keeping a higher Q value, a higher K2 value and better Temperature Coefficient of Frequency (TCF).

An elastic wave device includes a support substrate, a piezoelectric layer disposed on the support substrate, and an IDT electrode disposed on a piezoelectric layer and including first and second electrode fingers that are interdigitated. A region where the first and second electrode fingers overlap each other as seen in a direction of propagation of elastic waves is an excitation region. Edge portions where an acoustic velocity is lower than an acoustic velocity in a central portion are disposed on opposite sides of a central portion in the excitation region. A first busbar and second busbar include inner busbar portions, central busbar portions, and outer busbar portions. First and second offset electrode fingers extend from the inner busbar portions toward the leading ends of the second electrode fingers or first electrode fingers.

An acoustic wave device is disclosed. The acoustic waved device can be a shear horizontal mode surface acoustic wave device. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The piezoelectric layer can be a lithium niobate layer with a cut angle in a range of −20° YX to 25° YX. The interdigital transducer electrode including a first layer and a second layer. The first layer affects acoustic properties of the acoustic wave device and the second layer affects electrical properties of the acoustic wave device. The second layer is positioned between the piezoelectric layer and the first layer such that a frequency response of the acoustic wave device includes a Rayleigh mode response at a frequency higher than a shear horizontal mode response.