An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes first regions and second regions alternately arranged in an extension direction of electrode fingers, which excite an acoustic wave, in an overlap region in which the electrode fingers overlap, at least one electrode finger of the electrode fingers in the second regions having a different width from the at least one electrode finger in the first regions, a width of an outer second region of the second regions in the extension direction differs from a width of an inner second region of the second regions.

An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle . The oblique angle is about 0.4 or more and about 10 or less.

An elastic wave device includes an IDT electrode including first electrode fingers and second electrode fingers. In an intersecting portion, in which the first electrode fingers and the second electrode fingers interdigitate with each other, low-acoustic-velocity regions are disposed on both sides of a central region, high-acoustic-velocity regions are disposed outside of the low-acoustic-velocity regions, and the dimension of each of the low-acoustic-velocity regions in the electrode finger direction is not uniform in the elastic-wave propagation direction.

An elastic wave device includes, on an elastic wave element substrate, an IDT electrode including electrode fingers, and reflectors. At least one electrode finger of each of the reflectors include a portion having a relatively large thickness in a longitudinal direction and a portion having a relatively small thickness in the longitudinal direction. The portion having the relatively large thickness each reflector is thicker than a thickness of the electrode fingers of the IDT electrode.

An acoustic wave device with a bent section is disclosed. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The bent section is arranged to create a curvature in a waveguide of the acoustic wave device to suppress a transverse spurious mode of the acoustic wave device.

An acoustic wave resonator includes: a piezoelectric substrate; and an IDT located on the piezoelectric substrate and including a pair of comb-shaped electrodes facing each other, each of the pair of comb-shaped electrodes including a grating electrode exciting an acoustic wave and a bus bar to which the grating electrode is connected, wherein an anisotropy coefficient in a cross region where the grating electrodes of the pair of comb-shaped electrodes cross each other is positive; an anisotropy coefficient in a gap region located between a tip of the grating electrode of one of the pair of comb-shaped electrodes and the bus bar of the other is less than the anisotropy coefficient in the cross region, and an acoustic velocity of an acoustic wave propagating through the gap region is equal to or less than an acoustic velocity of an acoustic wave propagating through the cross region at an antiresonant frequency.

An acoustic wave resonator includes: a piezoelectric substrate; and an IDT that is located on the piezoelectric substrate and includes comb-shaped electrodes facing each other, each of the comb-shaped electrodes having grating electrode and a bus bar connected to the grating electrodes, a duty ratio of grating electrodes of the comb-shaped electrodes in a center region of an overlap region differing from a duty ratio of grating electrodes of the comb-shaped electrodes in an edge region of the overlap region in an arrangement direction of the grating electrodes, the grating electrodes of each of the comb-shaped electrodes overlapping with the grating electrodes of the other in the overlap region, a grating electrode of a first one of the comb-shaped electrodes in the center region having a different width from a grating electrode of a second one of the comb-shaped electrodes in the center region.

An elastic wave device includes a piezoelectric substrate and an interdigital transducer electrode on the piezoelectric substrate, the piezoelectric substrate including a piezoelectric layer and a high-acoustic-velocity member layer, the piezoelectric layer being stacked on the high-acoustic-velocity member layer. The piezoelectric layer is made of lithium tantalate. Denoting an elastic wave propagation direction as a first direction, and a direction perpendicular or substantially perpendicular to the first direction as a second direction, a central region, low-acoustic-velocity regions, and high-acoustic-velocity regions are provided in the interdigital transducer electrode in the second direction. The low-acoustic-velocity regions include mass-adding films on electrode fingers. Denoting a film thickness normalized to a wavelength determined by the electrode finger pitch of the interdigital transducer electrode as a wavelength-normalized film thickness (%), a product of the wavelength-normalized film thickness of the mass-adding films and the density (g/cm.sup.3) of the mass-adding films is about 13.4631 or less.

In a first group (FG1) of transducer fingers of an interdigital transducer of the SAW filter, a geometric parameter (eta) determining the resonance of the main mode of the transducer is varied in the transverse direction (TR) with a first increment. In a second group (FG2) of transducer fingers (EF), the geometric parameter is varied with a second increment that is opposed in effect to the first, so that the transverse geometric variation of the first and the second groups of transducer fingers accordingly compensate for each other, wherein the resonance of the main mode (M1) remains unchanged, while the interfering secondary mode (M2) is suppressed.

An elastic wave filter device includes a ladder filter that includes series arm resonators and parallel arm resonators. In one series arm resonator in which the acoustic velocity in a first and second edge area is lower than in a central area, each first electrode finger includes a large-width portion having a width larger than in remaining portions in the second edge area, and each second electrode finger includes a large-width portion having a width larger than in remaining portions in the first edge area. In at least one of remaining series arm resonators and the parallel arm resonators, each first and second electrode finger includes a large-width portion having a width larger than in remaining portions in both of the first and second edge areas.