A notch filter includes a first inductor coupled between an input node and an output node, a dual-resonator structure coupled between the input node and the output node, and a second inductor coupled between the dual-resonator structure and ground, and a bandpass filter includes a capacitor coupled between an input node and an output node, and a dual-resonator structure coupled between the input node, the output node, and ground.

In accordance with an embodiment, an RF system includes a transmit path having a transmit RF filter and an adjustable transmit phase shifter/matching network coupled between the transmit RF filter and a transmit antenna port, where the adjustable transmit phase shifter/matching network is configured to transform an impedance of the transmit RF filter at a receive frequency from a first lower impedance to a first higher impedance at the transmit antenna port; and a receive path having a receive RF filter and an adjustable receive phase shifter/matching network coupled between the receive RF filter and a receive antenna port, where the adjustable receive phase shifter/matching network is configured to transform an impedance of the receive RF filter at a transmit frequency from a second lower impedance to a second higher impedance at the receive antenna port.

In accordance with an embodiment, a method of operating an RF system includes filtering a first wideband RF signal using a wideband filter bank. Filtering the first RF signal includes separating the first wideband RF signal into frequency cluster signals, where each frequency cluster signal of the frequency cluster signals includes different frequency ranges, the first wideband RF signal includes multiple RF bands, and each of the different frequency ranges comprises a plurality of RF bands of the multiple RF bands. The method further includes band stop filtering at least one of the frequency cluster signals to produce a band stopped frequency cluster signal.

In accordance with an embodiment, a method of operating an RF system includes generating a first RF signal having a first frequency; filtering the generated first RF signal to form a first filtered transmitted signal; producing a first coupled signal and a first transmitted signal from the first filtered transmitted signal; transmitting the first transmitted signal; transmitting a second RF signal having a second frequency; bandpass filtering the first coupled signal to form a first tunable bandpass filtered signal; and measuring a parameter of the first tunable bandpass filtered signal.

An acoustic resonator is fabricated by bonding a first piezoelectric plate to a substrate and spans locations for a first and second cavity in the substrate. A top surface of the first piezoelectric plate is planarized to a first thickness. A bonding layer is formed on the first piezoelectric plate and spans the first and second cavity locations. A second piezoelectric plate is bonded to the bonding layer and spans the first and second cavity locations. A portion of the second piezoelectric plate spanning the second cavity location is etched away to form a first membrane over the first cavity location and a second membrane over the second cavity location. Interdigital transducers are formed on the first and second membranes over the first and second cavity location to form a first and second resonator on the same die.

A filter device has a substrate with a first cavity and a second cavity on a single die; and a bonding layer formed on the substrate but not spanning the first cavity or the second cavity. A piezoelectric plate is bonded to the bonding layer and spans the first and the second cavity. However, excess portions of piezoelectric plate are removed that extend a certain length past the perimeter of the first cavity and of the second cavity. Excess portions may be piezoelectric material that extends in the length and width direction past the perimeter of a cavity by more than between 2 and 25 percent of the cavity perimeter. An interdigital transducer (IDT) is on a front surface of the piezoelectric plate and having interleaved fingers over the first cavity.

A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. The supporting layer has a cavity, and the cavity has a top-inner surface. The lower metal layer is formed on the supporting layer. The piezoelectric layer is formed on the lower metal layer. The upper metal layer is formed on the piezoelectric layer. An acoustic wave resonance region is defined by an overlapping region of projections of the upper metal layer, the piezoelectric layer, the lower metal layer, the supporting layer and the cavity. The acoustic wave resonance region is divided into a peripheral region and a central region. The mass adjustment structure comprises a peripheral mass adjustment structure formed on the top-inner surface within the peripheral region.

Radio frequency filters are disclosed. A bandpass filter is discloses that includes one first bulk acoustic resonator on a first chip including a first piezoelectric layer having an LN-equivalent thickness less than or equal to 535 nm; a second bulk acoustic resonator on a second chip including a second piezoelectric layer having a thickness greater than the LN-equivalent thickness of the piezoelectric layer on the first chip; and a circuit card coupled to the first chip and the second chip and that electrically connects the first chip to the second chip.

The present disclosure provides a bulk acoustic wave (BAW) filter structure and a preparation method thereof. According to the present disclosure, piezoelectric film elements are formed on a surface of an epitaxial substrate to form a transfer structure; resonant regions are defined on a supporting substrate and covered with bonding units to obtain a bonding structure; upper and lower surfaces of the transfer structure are reversed, and bottom electrode units are bonded to the resonant regions correspondingly one to one to obtain a BAW structure; and the epitaxial substrate is removed, and top electrode units are formed on surfaces of the piezoelectric film elements that are in contact with the epitaxial substrate previously. The BAW filter structure of the present disclosure can achieve batch production with low cost, high efficiency and high yield.

A filter package comprising an array of piezoelectric films sandwiched between lower electrodes and an array of upper electrodes covered by an array of silicon membranes with cavities thereover: the lower electrode being coupled to an interposer with a first cavity between the lower electrodes and the interposer; the array of silicon membranes having a known thickness and attached over the upper electrodes with an array of upper cavities, each upper cavity between a silicon membrane of the array and a common silicon cover; each upper cavity aligned with a piezoelectric film, an upper electrode and silicon membrane, the upper cavities having side walls comprising SiO.sub.2; the individual piezoelectric films, their upper electrodes and silicon membranes thereover being separated from adjacent piezoelectric films, upper electrodes and silicon membranes by a passivation material.