Examples disclosed herein relate to set-reset (SR) latch circuits and methods for manufacturing the same. In some of the disclosed examples, a SR latch circuit includes an inverter storage loop for storing state information and a set of p-channel field-effect transistors (PFETs) for control circuitry. The PFETs may include first and second PFETs connected to a first node of the inverter storage loop, and third and fourth PFETs connected to a second node of the inverter storage loop. Gate terminals of the first and fourth PFETs may be connected to a first control input, and gate terminals of the second and third PFETs may be connected to a second control input.

An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.

In a sequential circuit, a first stage is configured to charge a voltage of a first node in response to a clock, and to discharge the voltage of the first node in response to the clock, a voltage of a second node, and data; a second stage is configured to charge the voltage of the second node in response to the clock, and to discharge the voltage of the second node in response to the clock and a logic signal; a combinational logic is configured to generate the logic signal based on the voltage of the first node, the voltage of the second node, and the data; and a latch circuit is configured to latch the voltage of the second node in response to the clock.

A semiconductor circuit includes a first circuit and a second circuit. The first circuit is configured to generate a voltage level at a first node based on a voltage level of input data, an inverted value of the voltage level at the first node, a voltage level of a clock signal, and a voltage level at a second node; and the second circuit is configured to generate the voltage level at the second node based on the voltage level of input data, an inverted value of the voltage level at the second node, the voltage level of the clock signal, and the inverted value of the voltage level at the first node. When the clock signal is at a first level, the first and second nodes have different logical levels. When the clock signal is at a second level, the first and second nodes have the same logical level.

The present disclosure relates to integrated level translator and latch circuits and, more particularly, to an integrated level translator and latch circuits for fence architectures in SRAM cells. The integrated level translator and latch for input signals includes a first clock (CLKS) and a second clock (CLKH). The first clock (CLKS) is used as a precharge and evaluation clock with its timing being critical for forward edge and the second clock (CLKH) is a latch clock.

In a sequential circuit, a first stage is configured to charge a voltage of a first node in response to a clock, and to discharge the voltage of the first node in response to the clock, a voltage of a second node, and data; a second stage is configured to charge the voltage of the second node in response to the clock, and to discharge the voltage of the second node in response to the clock and a logic signal; a combinational logic is configured to generate the logic signal based on the voltage of the first node, the voltage of the second node, and the data; and a latch circuit is configured to latch the voltage of the second node in response to the clock.

A semiconductor standard cell of a flip-flop circuit includes semiconductor fins extending substantially parallel to each other along a first direction, electrically conductive wirings disposed on a first level and extending substantially parallel to each other along the first direction, and gate electrode layers extending substantially parallel to a second direction substantially perpendicular to the first direction and formed on a second level different from the first level. The flip-flop circuit includes transistors made of the semiconductor fins and the gate electrode layers, receives a data input signal, stores the data input signal, and outputs a data output signal indicative of the stored data in response to a clock signal, the clock signal is the only clock signal received by the semiconductor standard cell, and the data input signal, the clock signal, and the data output signal are transmitted among the transistors through at least the electrically conductive wirings.

In an embodiment, an apparatus includes a first latch including a true storage node and a complement storage node, a discharge circuit, and a second latch. The first latch may pre-charge the true storage node and the complement storage node to a first voltage level using a clock signal. The discharge circuit may, in response to a determination that a scan mode signal is asserted, selectively discharge either the true storage node or the complement storage node based on a value of a scan data signal, and otherwise may selectively discharge either the true storage node or the complement storage node based on a value of a data signal. The second latch may store a value of a data bit based on a voltage level of the true storage node and a voltage level of the complement storage node.

A circuit comprises a data storage element that includes a sampling stage configured to sample a data value, the sampling stage comprising a plurality of p-type devices, wherein at least one of the plurality of p-type devices is non-collinear relative to the other p-type devices, a plurality of n-type devices, wherein at least one of the plurality of n-type devices is non-collinear relative to the other n-type devices, a feedback stage configured to maintain the data value sampled by the sampling stage.

Methods and systems for clock gating are described herein. In certain aspects, a method for clock gating includes receiving an input signal of a flip-flop and an output signal of the flip-flop, and passing a clock signal to an input of a gate in the flip-flop if the input signal and the output signal have different logic values or both the input signal and the output signal have a logic value of zero. The method also includes gating the clock signal if both the input signal and the output signal have a logic value of one.