A synchronization circuit includes a precharge circuit and a signal driving circuit. The precharge circuit precharges an output node to a first logic level. The signal driving circuit detects, in synchronization with a second dock signal having a phase leading a first clock signal, a logic level of an input signal and drives, in synchronization with the first clock signal, the output node to a second logic level according to the logic level of the input signal.

A clocked latch circuit includes an amplification circuit, a latch circuit, a first current source, and a second current source. The amplification circuit changes voltage levels of first and second output signals based on a clock signal, a first input signal, and a second input signal. The latch circuit maintains the voltage levels of the first and second output signals based on a complementary signal of the clock signal. The first current source allows a first current to flow to activate the amplification circuit. The second current source allows a second current that is different from the first current to flow to activate the latch circuit.

To provide a miniaturized data holding circuit. First and second MOS transistors respectively transmit a data signal and an inverted data signal to inputs of first and second inverting gates that constitute a state holding circuit when a clock signal is at a first level. Fifth and sixth MOS transistors are respectively inserted in a feedback path from an output of the second inverting gate to the input of the first inverting gate and a feedback path from an output of the first inverting gate to the input of the second inverting gate, and respectively transmit the outputs of the second and first inverting gates when the clock signal is at a second signal level. Seventh and eighth MOS transistors are constituted in a channel of a conductive type different from the first MOS transistor and connected in parallel to the fifth and sixth MOS transistors, respectively, and transmit the output of the second inverting gate and the output of the first inverting gate on the basis of the inverted data signal and the data signal, respectively.

Techniques are disclosed relating to level-shifting circuitry and time borrowing across voltage domains. In some embodiments, sense amplifier circuitry generates, based on an input signal at a first voltage level, an output signal at a second, different voltage level. Pulse circuitry may generate a pulse signal in response to an active clock edge of a clock signal that is input to the sense amplifier circuitry. Initial resolution circuitry may drive the output signal of the sense amplifier circuitry to match the value of the input signal during the pulse signal. Secondary resolution circuitry may maintain a current value of the output signal after expiration of the pulse signal. This may allow the input signal to change during the pulse, e.g., to enable time borrowing by upstream circuitry.

A flip-flop including a scan enable input for receiving a scan enable signal, a clock input for receiving a clock signal, input select circuitry that is configured to select between a data input and a scan input based on a state of the scan enable signal for providing a selected input, latching circuitry that is configured to latch the selected input to a preliminary output node in response to transitions of the clock signal, and output select circuitry that is configured to provide a state of the preliminary output node to a selected one of a scan output and a data output based on a state of the scan enable signal. The flip-flop may be implemented using fast yet leaky transistors. The data output may be disabled to prevent toggling other circuitry when scanning into or out of a memory for data retention.

A flip-flop including a scan enable input for receiving a scan enable signal, a clock input for receiving a clock signal, input select circuitry that is configured to select between a data input and a scan input based on a state of the scan enable signal for providing a selected input, latching circuitry that is configured to latch the selected input to a preliminary output node in response to transitions of the clock signal, and output select circuitry that is configured to provide a state of the preliminary output node to a selected one of a scan output and a data output based on a state of the scan enable signal. The flip-flop may be implemented using fast yet leaky transistors. The data output may be disabled to prevent toggling other circuitry when scanning into or out of a memory for data retention.

A method includes: selectively generating a first current by a first current generating circuit according to a first control signal; generating a second current by a second current generating circuit; and comparing a first input signal and a second input signal at a common node to generate an output signal according to the first current, the second current, and a second control signal. The second control signal and the first control signal are in-phase with each other.

Methods, systems, and devices for feedback for multi-level signaling in a memory device are described. A receiver may use a modulation scheme to communicate information with a host device. The receiver may include a first circuit, a second circuit, a third circuit, and a fourth circuit. Each of the first circuit, the second circuit, the third circuit, and the fourth circuit may determine, for a respective clock phase, a voltage level of a signal modulated using the modulation scheme. The receiver may include a first feedback circuit, a second feedback circuit, a third feedback circuit, and a fourth feedback circuit. The first feedback circuit that may use information received from the first circuit at the first clock phase and modify the signal input into the second circuit for the second clock phase.

A comparing device includes a first current generating circuit arranged to selectively generate a first current and a second current different from the first current, according to a first control signal. The comparing device also includes a comparing circuit having a common node coupled to the first current generating circuit for comparing a first input signal and a second input signal to generate an output signal according to the first current, the second current, and a second control signal. The second control signal and the first control signal are in-phase with each other.

The present disclosure includes storage circuits, such latches. In one embodiment, a circuit includes a plurality of latches, each latch including a first N-type transistor formed in a first P-type material, a first P-type transistor formed in a first N-type material, a second N-type transistor formed in a second P-type material, and a second P-type transistor formed in a second N-type material. The first and second N-type transistors are formed in different P-wells and the first and second P-type transistors are formed in different N-wells. In other storage circuits, charge extraction transistors are coupled to data storage nodes and are biased in a nonconductive state. These techniques make the data storage circuits more resilient, for example, to an ionizing particle striking the circuit and generating charge carriers that would otherwise change the state of the storage node.