A level shifter circuit is configured to receive first and second complementary input signals. Each of the first and second complementary input signals have a value of either a first supply voltage or a first reference voltage. The level shifter further includes a strong latch circuit operable in response to the first and second complementary input signals to drive one of first and second output signals to a second supply voltage and includes a weak latch circuit operable to drive the other of the first and second output signals to a second reference voltage.

Various implementations described herein may refer to level shifter circuitry using current mirrors. For instance, in one implementation, a level shifter circuit may include a latch circuit configured to receive an input signal, where the latch circuit includes a plurality of transistors configured to generate an output signal based on the input signal. The level shifter circuit may also include a first current mirror circuit coupled to the latch circuit. The level shifter circuit may further include a second current mirror circuit coupled to the latch circuit, where the first current mirror circuit and the second current mirror circuit are configured to drive the output signal from a transient state voltage level to a steady state voltage level.

A circuit includes a bias circuit and a level shifter. The bias circuit includes first and second input terminals configured to receive first and second power supply voltages, and is configured to generate a bias voltage having the greater of a first voltage level of the first power supply voltage or a second voltage level of the second power supply voltage. The level shifter includes a first PMOS transistor configured to receive the first power supply voltage and a second PMOS transistor configured to receive the second power supply voltage, and each of the first and second PMOS transistors includes a bulk terminal configured to receive the bias voltage.

A circuit to a extend signal comparison voltage range includes a latching circuit and a comparator responsive to common-mode input signals. The comparator is coupled to the latching circuit and to a dynamic node. The circuit also includes a clocked boost circuit coupled to the dynamic node. The clocked boost circuit is configured to extend a supply voltage range of the comparator via biasing the dynamic node. A method to extend a signal comparison voltage range includes selectively shifting a voltage level of one of a ground reference of a dynamic circuit or a supply reference of the dynamic circuit in response to a clock signal.

In an embodiment, an apparatus includes an input circuit coupled to a first power supply with a first voltage level, a power circuit coupled to a second power supply with a second voltage level, and an output driver. The input circuit may receive an input signal, and generate an inverted signal dependent upon the input signal. The power circuit may generate a power signal in response to first values of the input and the inverted signals, wherein a voltage level of the power signal may be dependent upon the second voltage level. The power circuit may also generate a third voltage level on the power signal in response to second values of the input and the inverted signals. The output driver may generate an output signal dependent upon the input signal. The output signal may transition between the voltage level of the power signal and the ground reference level.

A differential signal input buffer is disclosed. The differential signal input buffer may receive a differential signal that includes a first signal and a second signal and may be divided into a first section and a second section and. The first section may buffer and/or amplify the first signal based on a first level-shifted second signal. The second section may buffer and/or amplify the second signal based on a first level-shifted first signal. In some implementations, the first section may buffer and/or amplify the first signal based on a second level-shifted second signal. Further, in some implementations, the second section may buffer and/or amplify the second signal based on a second level-shifted first signal.

A signal is caused to have a small amplitude without increasing a voltage source, and power consumption is reduced. A semiconductor circuit includes a driver, and a pulse control circuit that controls the driver. The driver has a configuration in which first and second transistors are connected. The pulse control circuit supplies a first control signal to the first transistor, and supplies a second control signal to the second transistor. The first and second control signals to be supplied from the pulse control circuit are different in a pulse width from each other. Therefore, the pulse control circuit reduces an output amplitude of the driver.

A level shifter includes main and auxiliary level shifters, a switch circuit and a hold circuit. The main level shifter includes NMOS and PMOS transistors in a Differential to Single Ended (D2S) structure. The auxiliary level shifter is connected to an output of the main level shifter and includes NMOS and PMOS transistors. Each of the main and auxiliary level shifters includes internal nodes. The switch circuit settles first nodes of the internal nodes to values to support high speed data transmission, and the hold circuit holds second nodes of the internal nodes to a certain value during low frequency operation. The level shifter receives a serial stream of binary values of core supply voltage, converts the serial stream of binary values from the core supply voltage to an input/output (I/O) voltage, and outputs the serial stream of binary values of the input/output (I/O) voltage.

Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.

Decision feedback equalization (DFE) tap systems and related apparatuses and methods are disclosed. An apparatus includes output nodes to provide output signals, a complementary metal-oxide-semiconductor (CMOS) DFE tap electrically connected to the output nodes, and a current integrating summer electrically connected to the output nodes. The current integrating summer is to reset the output nodes to a common mode voltage potential.