A signal is caused to have a small amplitude without increasing a voltage source, and power consumption is reduced. A semiconductor circuit includes a driver, and a pulse control circuit that controls the driver. The driver has a configuration in which first and second transistors are connected. The pulse control circuit supplies a first control signal to the first transistor, and supplies a second control signal to the second transistor. The first and second control signals to be supplied from the pulse control circuit are different in a pulse width from each other. Therefore, the pulse control circuit reduces an output amplitude of the driver.

A circuit includes cross coupled invertors including a first invertor and a second inventor. The first invertor and the second invertor are cross coupled at a first data node and a second data node. An input unit is coupled between the cross-coupled invertors and a power node. The input unit controls the cross-coupled invertors in response to a first input signal received at a first input terminal of the input unit and a second input signal received at a second input terminal of the input unit. A first transistor is connected between the power node and a supply node. The first transistor connects the power node to the supply node in response to an enable signal changing to a first value. A second transistor is connected between the power node and ground. The second transistor connects the power node to the ground in response to the enable signal changing to a second value.

A level shifting circuit includes negative voltage shifting circuitry including a first leg and a second leg. The first leg includes a first NMOS transistor and a first PMOS transistor in series with a first input node and a negative amplified voltage, and the second leg includes a second NMOS transistor and a second PMOS transistor in series with a second input node and the negative amplified voltage. The level shifting circuit further includes positive voltage shifting circuitry including a first plurality of high voltage transistors in series with a positive amplified voltage and an output node of the level shifting circuit, and a second plurality of high voltage transistors in series with a first intermediate node of the first leg of the negative voltage shifting circuitry and the output node of the level shifting circuit. The level shifting circuitry further includes input circuitry including a plurality of inverters.

A single ended receiver includes a current mode logic circuit, a differential to single amplifier, and a voltage detector. The current mode logic circuit is configured to receive an input signal and a reference voltage value and is configured to output a first output signal. The differential to single amplifier is coupled to the current mode logic circuit and is configured to receive the first output signal and to output a second output signal. The voltage detector is coupled to the differential to single amplifier and is configured to output a control signal to the differential to single amplifier according to the reference voltage value. The differential to single amplifier is further configured to adjust a voltage value of the differential to single amplifier internal signal according to the control signal, so that a duty cycle of the second output signal is adjusted.

A level shifter circuit is provided. In some examples, the level shifter circuit includes a first set of transistors and a second set of transistors coupled between first and second power supply nodes. The control terminals of the first and second lower transistors are coupled to an input node. The level shifter circuit also includes a third set of transistors and a fourth set of transistors coupled between first and third power supply nodes. A control terminal of a third lower transistor is coupled to a second intermediate node, and a control terminal of a fourth lower transistor is coupled to a first intermediate node. Control terminals of the first upper transistor and the fourth upper transistor are coupled to a third intermediate node. Control terminals of the second upper transistor and the third upper transistor are coupled to a fourth intermediate node.

Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.

The present document relates to a level shifter circuit configured to transform an input voltage at an input of the level shifter circuit into an output voltage at an output of the level shifter circuit. The level shifter circuit may comprise a first switching element coupled between an output supply voltage and a positive output terminal, wherein a control terminal of the first switching element is coupled to a negative output terminal. The level shifter circuit may comprise a second switching element coupled between the output supply voltage and the negative output terminal, wherein a control terminal of the second switching element is coupled to the positive output terminal. The level shifter circuit may comprise a drive circuit configured to drive the control terminals of the first and the second switching element based on the input voltage at the input of the level shifter circuit.

Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.

A sensing circuit for an organic light-emitting diode driver includes a sample and hold circuit and a gain amplifier. The sample and hold circuit is configured to sample a sensing signal received via an input terminal. The gain amplifier is coupled to the sample and hold circuit. The sample and hold circuit includes a first capacitor, a second capacitor, a first switch, a second switch, a third switch and a fourth switch. The first capacitor is coupled between the input terminal and the gain amplifier. The second capacitor is coupled between a reference terminal and the gain amplifier. The first switch is connected between the first capacitor and the input terminal. The second switch is connected between the second capacitor and the reference terminal. The third switch is connected between the first capacitor and the gain amplifier. The fourth switch is connected between the second capacitor and the gain amplifier.

A level shifter includes a pull-down circuit, a pull-up circuit, a protection circuit, and an output generator. The pull-down circuit is configured to receive input voltages, and generate bias voltages. The input voltages are associated with a voltage domain. The pull-up circuit is configured to receive a supply voltage and generate control voltages. The protection circuit is configured to receive reference voltages, and control the generation of the bias voltages and the control voltages. The output generator is configured to receive at least one of the reference voltages, and at least one of the bias voltages and the control voltages, and generate output voltages that are able to reach minimum and maximum voltage levels of another voltage domain. Further, the output voltages remain unaffected by variations in process, voltage, and temperature.