The present disclosure relates to a solid-state imaging apparatus, a method for driving the solid-state imaging apparatus, and electronic equipment for improving the determination speed of comparators and allowing the comparators to operate faster. A differential input circuit operates on a first power supply voltage and outputs a signal when a voltage of a pixel signal is higher than a voltage of a reference signal. A voltage conversion circuit converts the output signal from the differential input circuit into a signal corresponding to a second power supply voltage. A positive feedback circuit accelerates a transition rate at which a comparison result signal of a comparison in voltage between the pixel signal and the reference signal is inverted. Multiple time code transfer sections each include a shift register that transfer a time code. The present disclosure can be applied, for example, to an imaging apparatus including A/D converters disposed in pixels.

A circuit includes a flip-flop included in a multi-stage shift register and a control element. The flip-flop includes an output field-effect transistor, a first field-effect transistor configured to operate to supply one of a high potential and a low potential to the gate of the output field-effect transistor, and a second field-effect transistor configured to operate to supply the other one of the high potential and the low potential to the gate of the output field-effect transistor. The control element is configured to operate to make an electric current flow between the gate and a power supply in the opposite direction of an off-leakage current from at least either one of the first field-effect transistor and the second field-effect transistor in a period where the first field-effect transistor and the second field-effect transistor are off.

Techniques for a combined voltage translator and latch circuit. The circuit translates a signal from a first voltage domain in an integrated circuit to a second voltage domain in the integrated circuit and acts as a latch for the signal. The circuit includes a regenerative feedback loop, including an input node an output node, a first inverter, and a first transistor. The input node is coupled to the first transistor and an input of the first inverter. The output node is coupled to an output of the first inverter and a gate of the first transistor.

A voltage translation device is disclosed. The voltage translation device includes an input circuit, operating in a first voltage domain, that is configured to receive an input signal. The voltage translation device also includes an output circuit, operating in a second voltage domain, that includes a latch circuit. The voltage translation device also includes a driver circuit that is controlled by the input circuit to pass a voltage from the first voltage domain to the latch circuit in order to trigger the latch circuit to output an output signal in the second voltage domain according to the input signal in the first voltage domain.

A memory device includes a data receiver, a latch driver, and a voltage level shifter. The data receiver works in a first voltage, receives an enable signal, a reference signal, and an input data signal, and outputs an internal data signal by the first voltage. The latch driver receives a write select signal and the internal data signal, latches the internal data signal by the first voltage, and outputs at least one latch data signal by a second voltage. The voltage level shifter receives the at least one latch data signal by the second voltage and generates at least one output data signal by the at least one latch data signal. The voltage level shifter sets a voltage value of the at least one output data signal by the first voltage. The voltage value of the first voltage is greater than the voltage value of the second voltage.

A range sensor and a method thereof. The range sensor includes a light source configured to project a plurality of sheets of light at an angle within a field of view (FOV); an image sensor, wherein the image sensor is offset from the light source; collection optics; and a controller connected to the light source, the image sensor, and the collection optics, and configured to simultaneously determine a range of a distant object based on direct time-of-flight (TOF) and a range of a near object based on triangulation.

A method of forming a semiconductor device includes forming active regions, forming S/D regions, forming MD contact structures and forming gate lines resulting in corresponding transistors that define a first time delay circuit having a first input configured to receive a first clock signal and having a first output configured to generate a second clock signal from the first clock signal; and corresponding transistors that define a second time delay circuit having a second input configured to receive the second clock signal and having a second output configured to generate a third clock signal from the first clock signal; forming a first gate via-connector in direct contact with the first gate line atop the first-type active region in the first area; and forming a second gate via-connector in direct contact with the second gate line atop the second-type active region in the second area.

A voltage translation device is disclosed. The voltage translation device includes an input circuit, operating in a first voltage domain, that is configured to receive an input signal. The voltage translation device also includes an output circuit, operating in a second voltage domain, that includes a latch circuit. The voltage translation device also includes a driver circuit that is controlled by the input circuit to pass a voltage from the first voltage domain to the latch circuit in order to trigger the latch circuit to output an output signal in the second voltage domain according to the input signal in the first voltage domain.

At least some embodiments are directed to a flip-flop that comprises a tri-state inverter and a master latch coupled to the tri-state inverter and comprising a first transistor, a first inverter, and a first logic gate. The master latch receives a clock signal. The flop also comprises a slave latch coupled to the master latch and comprising a second transistor and a second inverter. The slave latch receives the clock signal. The flop further comprises an enablement logic coupled to the master latch and comprising multiple, additional logic gates. The tri-state inverter, the master and slave latches, and the enablement logic are configured so that when a flip-flop input signal D and a flip-flop output signal Q are identical and the clock signal is toggled, a state of the master latch and a state of the slave latch remain static.

A leakage compensation dynamic register, a data operation unit, a chip, a hash board, and a computing apparatus. The leakage compensation dynamic register comprises: an input terminal, an output terminal, a clock signal terminal, and an analog switch unit; a data latch unit for latching the data under control of the clock signal; and an output drive unit for inverting and outputting the data received from the data latch unit, the analog switch unit, the data latch unit, and the output drive unit being sequentially connected in series between the input terminal and the output terminal, and the analog switch unit and the data latch unit having a node therebetween, wherein the leakage compensation dynamic register further comprises a leakage compensation unit electrically connected between the node and the output terminal.