Systems, methods, circuits, and apparatus for managing flip flop circuits are provided. In one aspect, a flip flop circuit includes a first sub-circuit having a first inner node between a first input node and a first output node, a second sub-circuit having a second inner node between a second input node and a second output node, and a third sub-circuit coupled between the first and second inner nodes. The third sub-circuit is configured to be: in an open state to conductively disconnect the first and second inner nodes, and in a close state to conductively connect the first and second inner nodes, such that a first output at the first output node corresponds to a second input at the second input node and a second output at the second output node corresponds to a first input at the first input node.

Methods, systems, and devices for feedback for multi-level signaling in a memory device are described. A receiver may use a modulation scheme to communicate information with a host device. The receiver may include a first circuit, a second circuit, a third circuit, and a fourth circuit. Each of the first circuit, the second circuit, the third circuit, and the fourth circuit may determine, for a respective clock phase, a voltage level of a signal modulated using the modulation scheme. The receiver may include a first feedback circuit, a second feedback circuit, a third feedback circuit, and a fourth feedback circuit. The first feedback circuit that may use information received from the first circuit at the first clock phase and modify the signal input into the second circuit for the second clock phase.

A D-type flip-flop (DFF) includes an input circuit having a plurality of transistors configured to receive a clock signal and a data signal, a first inverter (INV1) having a pair of transistors, the first inverter configured to receive an input voltage (x) from the input circuit at a first inverter input, the first inverter configured to provide an output voltage (y) to a first inverter output, a second inverter (INV2) coupled to the first inverter (INV1), the second inverter having a second inverter input and a second inverter output, the second inverter input coupled to the first inverter output, a third inverter (INV3) coupled to the second inverter (INV2), the third inverter having a third inverter input and a third inverter output, and a current device coupled to the first inverter output, the current device configured to provide a current at the first inverter output.

In one form, a power supply monitor including a current controlled oscillator circuit, a time-to-digital converter, and an output divider. The current controlled oscillator circuit has an input for receiving a power supply voltage to be measured, and an output for providing a frequency signal having a frequency linearly proportional to the power supply voltage. The time-to-digital converter has an input coupled to the output of the current controlled oscillator circuit, and an output for providing a count signal representative of a number of cycles of a reference clock signal per cycle of the frequency signal. The output divider has an input coupled to the output of the time-to-digital converter, and an output for providing a divided count signal representative of a value of the power supply voltage, and provides the divided count signal by dividing a fixed number by the count signal.

A level shifter includes: a first inverter configured to receive an input signal in a low voltage domain and shift the input signal from the low voltage domain to a first output signal at a first output terminal in a high voltage domain higher than the low voltage domain in response to a logical high state of a first clock signal in the low voltage domain; a second inverter configured to receive a complement of the input signal and shift the complement of the input signal from the low voltage domain to a second output signal at a second output terminal in the high voltage domain in response to the logical high state; a first NMOS sensing transistor and a second NMOS sensing transistor; a PMOS transistor configured to equalize the first output signal and the second output signal in response to a logical low state of the first clock signal.

An in-memory computing circuit for a fully connected binary neural network includes an input latch circuit, a counting addressing module, an address selector, a decoding and word line drive circuit, a memory array, a pre-charge circuit, a writing bit line drive circuit, a replica bit line column cell, a timing control circuit, a sensitive amplifier and a NAND gate array, an output latch circuit and an analog delay chain. A parallel XNOR operation is performed in the circuit on the SRAM bit line, and the accumulation operation, activation operation and other operations are performed by the delay chain in the time domain. Partial calculation is completed while reading the data, and the delay chain with a small area occupation can be integrated with SRAM, thus reducing the energy consumption of the memory access process. Multi-column parallel computing also improves system throughput.

Techniques are described for implementing a true-single-phase-clocking (TSPC) flop with loading functionality. For example, the a loadable TSPC flop can receive input signals, including at least a clock input signal, a SET signal, and a RESET signal. Responsive to one configuration of the input signals, the loadable TSPC flop operates in a normal mode, in which its output node toggles responsive to the clock input signal. Responsive to another configuration of the input signals, the loadable TSPC flop operates in a reset loading mode, such that the Qb output node is loaded and held to a predetermined reset value. Responsive to another configuration of the input signals, the loadable TSPC flop operates in a set loading mode, such that the Qb output node is loaded and held to a predetermined set value that is a complement of the predetermined reset value.

An output gain of a latch circuit is increased. The latch circuit includes a first circuit, a second circuit, and first to fourth transistors. The latch circuit includes a first input/output terminal and a second input/output terminal. The first circuit and the second circuit have a function of a current source. In the case where the third transistor is off and the fourth transistor is on, the latch circuit is supplied with a first input signal supplied to the first input/output terminal and a second input signal supplied to the second input/output terminal. In the case where the third transistor is on and the fourth transistor is off, an inverted signal of the first input signal is output to the first input/output terminal of the latch circuit, and an inverted signal of the second input signal is output to the second input/output terminal of the latch circuit. The first circuit and the second circuit increase the output gain of the latch circuit.

Comparator circuitry for use in a comparator to capture differences between magnitudes of a pair of comparator input signals in a series of capture operations defined by a reset signal, the circuitry comprising: latch circuitry, comprising a pair of latch input transistors which form corresponding parts of first and second current paths of the latch circuitry respectively, which current paths extend in parallel between high and low voltage sources, a pair of latch output nodes at corresponding positions along the first and second current paths of the latch circuitry respectively, and timing circuitry; and gain-stage circuitry, comprising a pair of cross-coupled gain-stage output transistors connected along respective first and second current paths of the gain-stage circuitry which extend in parallel between high and low voltage sources, and a pair of diode-connected gain-stage output transistors connected in parallel with the pair of cross-coupled gain-stage output transistors, respectively.

A semi-dynamic flip-flop includes a semiconductor substrate, first through fourth power rails, and at least one clock gate line. The first through fourth power rails are disposed on the semiconductor substrate, extend in a first direction, and are arranged sequentially in a second direction substantially perpendicular to the first direction. The at least one clock gate line is disposed on the semiconductor substrate, and extends in the second direction to pass through at least two regions among a first region between the first power rail and the second power rail, a second region between the second power rail and the third power rail, and a third region between the third power rail and the fourth power rail. The at least one clock gate line receives an input clock signal.