Methods, systems, and devices for feedback for multi-level signaling in a memory device are described. A receiver may use a modulation scheme to communicate information with a host device. The receiver may include a first circuit, a second circuit, a third circuit, and a fourth circuit. Each of the first circuit, the second circuit, the third circuit, and the fourth circuit may determine, for a respective clock phase, a voltage level of a signal modulated using the modulation scheme. The receiver may include a first feedback circuit, a second feedback circuit, a third feedback circuit, and a fourth feedback circuit. The first feedback circuit that may use information received from the first circuit at the first clock phase and modify the signal input into the second circuit for the second clock phase.

A comparator is described. The comparator may be used in several applications, including in digital-to-analog converters (ADC). The comparator may comprise a high-speed amplifier, a low-noise amplifier, a controller and a bi-stable circuit. The high-speed amplifier may be activated during a first period, for example when the comparator tends to exhibit a slow response. During this period, the comparator may sacrifice the noise performance. The low-noise amplifier may be activated during a second period, for example when the difference between the signals appearing as inputs to the comparator is small. The low-noise amplifier may have a gain that is large enough to limit decision errors. The bi-stable circuit, which may be implemented using a latch, may be configured to output a signal equal to one of the supply voltages, in response to receiving the input signal from one of the stages.

A semiconductor device comprising a first supply voltage, a second supply voltage, different from the first supply voltage; and a switching circuit. The switching circuit comprises an input configured to receive an input signal corresponding to the first supply voltage and an output configured to output an output signal corresponding to the second supply voltage. The switching circuit is a combined latch with a built-in level shifter that provides latching functionality and level shifting functionality and a leakage path is cut-off when the switching circuit is providing latching functionality.

The present disclosure relates to integrated level translator and latch circuits and, more particularly, to an integrated level translator and latch circuits for fence architectures in SRAM cells. The integrated level translator and latch for input signals includes a first clock (CLKS) and a second clock (CLKH). The first clock (CLKS) is used as a precharge and evaluation clock with its timing being critical for forward edge and the second clock (CLKH) is a latch clock.

At least some embodiments are directed to a flip-flop that comprises a tri-state inverter and a master latch coupled to the tri-state inverter and comprising a first transistor, a first inverter, and a first logic gate. The master latch receives a clock signal. The flop also comprises a slave latch coupled to the master latch and comprising a second transistor and a second inverter. The slave latch receives the clock signal. The flop further comprises an enablement logic coupled to the master latch and comprising multiple, additional logic gates. The tri-state inverter, the master and slave latches, and the enablement logic are configured so that when a flip-flop input signal D and a flip-flop output signal Q are identical and the clock signal is toggled, a state of the master latch and a state of the slave latch remain static.

Some embodiments include apparatuses having input nodes to receive input signals, output nodes to provide output signals, a first stage including a first pair of input transistors, the first pair of transistors including gates coupled to the input nodes, a second stage including a second pair of input transistors, the second pair of transistors including gates coupled to the input nodes, and a third stage including inverters coupled to the output nodes. The inverters are coupled to the first and second stages at the same nodes to switch the output signals between different voltages based on the input signals.

Methods, systems, and devices for feedback for multi-level signaling in a memory device are described. A receiver may use a modulation scheme to communicate information with a host device. The receiver may include a first circuit, a second circuit, a third circuit, and a fourth circuit. Each of the first circuit, the second circuit, the third circuit, and the fourth circuit may determine, for a respective clock phase, a voltage level of a signal modulated using the modulation scheme. The receiver may include a first feedback circuit, a second feedback circuit, a third feedback circuit, and a fourth feedback circuit. The first feedback circuit that may use information received from the first circuit at the first clock phase and modify the signal input into the second circuit for the second clock phase.

A semiconductor module according to the present disclosure comprises a high potential side drive circuit and a low potential side drive circuit. The high potential side drive circuit includes: first reception terminals to receive a first data signal, an enable signal, and a first clock signal; a first shift register; and a first output terminal to output the first clock signal to the low potential side drive circuit as a second clock signal. The low potential side drive circuit includes: second reception terminals to receive a second data signal, the enable signal, and the second clock signal; a second shift register, and a second output terminal to output the second data signal held in a flip-flop of a last stage of the second shift register to the high potential side drive circuit as the first data signal.

A latch circuit includes an input stage, an amplifying stage and a clock gating circuit. The input stage is arranged for receiving at least a clock signal and a data control signal. The amplifying stage is coupled to the input stage and supplied by a supply voltage and a ground voltage, and is arranged for retaining a data value and outputting the data value according to the clock signal and the data control signal. The clock gating circuit is coupled to the amplifying stage, and is arranged for avoiding a short-circuit current between the supply voltage and the ground voltage.

A sampling circuit uses an input stage to sample an input signal and a secondary evaluation stage to maintain the output state of the input stage. Once the input stage transitions at a clock transition, the secondary evaluation stage uses regenerative feedback devices to hold the state to help ensure the sampling circuit only switches once during an evaluation.