A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.

Materials and methods for modifying semiconducting substrate surfaces in order to dramatically change surface energy are provided. Preferred materials include perfluorocarbon molecules or polymers with various functional groups. The functional groups (carboxylic acids, hydroxyls, epoxies, aldehydes, and/or thiols) attach materials to the substrate surface by physical adsorption or chemical bonding, while the perfluorocarbon components contribute to low surface energy. Utilization of the disclosed materials and methods allows rapid transformation of surface properties from hydrophilic to hydrophobic (water contact angle 120° and PGMEA contact angle) 70°. Selective liquiphobic modifications of copper over Si/SiOx, TiOx over Si/SiOx, and SiN over SiOx are also demonstrated.

A plasma processing method executed by a plasma processing apparatus includes a first step, a second step, and an etching step. In the first step, the plasma processing apparatus forms a first film on a processing target in which a plurality of openings having a predetermined pattern are formed. In the second step, the plasma processing apparatus forms a second film having an etching rate lower than that of the first film on the processing target on which the first film is formed, and having different film thicknesses on the side surfaces of the openings according to the sizes of the openings. In the etching step, the plasma processing apparatus performs etching from above the second film under a predetermined processing condition until a portion of the first film is removed from at least a portion of the processing target.

Provided is a high oil contact angle coating comprising fluoropolymer, compositions and processes for forming the coating, and articles comprising the coating. The fluoropolymer is a crosslinkable tetrapolymer fluoropolymer produced from the copolymerization of monomers tetrafluoroethylene, fluoro(alkyl vinyl ether) or fluoro(alkyl ethylene), alkyl vinyl ether and alkenyl silane. The fluoropolymer coating has high oil contact angle and utility as coating when the fluoropolymer is in the uncrosslinked or crosslinked state.

The present application discloses a semiconductor device with a carbon hard mask. The semiconductor device includes a substrate, conductive layers positioned on the substrate, a carbon hard mask layer positioned on the conductive layers, an insulating layer including a lower portion and an upper portion, and a conductive via positioned along the upper portion of the insulating layer and the carbon hard mask layer and positioned on one of the adjacent pair of the conductive layers. The lower portion is positioned along the carbon hard mask layer and positioned between an adjacent pair of the conductive layers, and the upper portion is positioned on the lower portion and on the carbon hard mask layer.

A metal complex is disclosed. In an embodiment a metal complex includes at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure: ##STR00001## wherein E.sup.1 and E.sup.2 are oxygen, wherein the substituent R.sup.1 is selected from the group consisting of branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5, wherein the substituent R.sup.2 is selected from the group consisting of branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl and heteroaryl, wherein m>0 to at most 5−n, and wherein the metal M is a main group metal of groups 13 to 15 of the periodic table of elements.

Provided is an etching method performed in a substrate-processing apparatus having: a first electrode on which a substrate is placed; and a second electrode facing the first electrode, the method comprising: a first step for introducing a first gas and halfway etching a target film into a pattern of a predetermined film on the target film formed on the substrate; a second step for introducing a second gas including Ar gas, H2 gas, and deposition gas and applying DC voltage to the second electrode to form a protective film, the second step being performed after the first step; and a third step for introducing a third gas and etching the target film, the third step being performed after the step for forming the protective film.

Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.

A method of forming a mask pattern and a method of fabricating a semiconductor device, the method of forming a mask pattern including providing a substrate including a plurality of patterns thereon; forming a mask material solution layer such that the mask material solution layer covers the patterns on the substrate; and applying a liquid material to remove an upper portion of the mask material solution layer, wherein the mask material solution layer includes a fluorine additive concentrated at the upper portion of the mask material solution layer.

A dry etching method according to the present disclosure is for forming a through hole in a laminated film of silicon oxide layers and silicon nitride layers on a substrate in a direction vertical to the laminated film by plasmatizing a dry etching agent to generate a plasma and etching the laminated film by the plasma through a mask having a predetermined opening pattern under a negative direct-current self-bias voltage whose absolute value is 500 V or greater, wherein the dry etching agent contains at least C.sub.3F.sub.6, a hydrogen-containing saturated fluorocarbon represented by C.sub.xH.sub.yF.sub.z and an oxidizing gas, and wherein the volume of the hydrogen-containing saturated fluorocarbon contained in the dry etching agent is in a range of 0.1 to 10 times the volume of C.sub.3F.sub.6 contained in the dry etching agent.