Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume; generating a plasma comprising ions in the process volume; bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product. In embodiments, the curing stabilizes the dielectric material by reducing the oxygen content and increasing the nitrogen content of the dielectric material.

Provided are certain silyl amine compounds useful as precursors in the vapor deposition of silicon-containing materials onto the surfaces of microelectronic devices. Such precursors can be utilized with optional co-reactants to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, silicon oxycarbonitride (SiOCN), silicon carbonitride (SiCN), and silicon carbide.

Provided is a composition containing a silylamine compound and a method for manufacturing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a silylamine compound capable of forming a silicon-containing thin film having a significantly excellent water vapor transmission rate to thereby be usefully used as a precursor of the silicon-containing thin film and an encapsulant of a display, and a method for manufacturing a silicon-containing thin film using the same.

A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.

According to the present invention there is provided a method of depositing a hydrogenated silicon carbon nitride (SiCN:H) film onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising the steps of: providing the substrate in a chamber; introducing silane (SiH.sub.4), a hydrocarbon gas or vapour, nitrogen gas (N.sub.2), and hydrogen gas (H.sub.2) into the chamber; and sustaining a plasma in the chamber so as to deposit SiCN:H onto the substrate by PECVD at a process temperature of less than about 200° C.

A method of forming an IC structure includes providing a metal gate structure, a spacer adjacent the metal gate structure and a contact to each of a pair of source/drain regions adjacent sides of the spacer. The spacer includes a first dielectric having a first dielectric constant. The metal gate structure is recessed, and the spacer is recessed to have an upper surface of the first dielectric below an upper surface of the metal gate structure, leaving a lower spacer portion. An upper spacer portion of a second dielectric having a dielectric constant lower than the first dielectric is formed over the lower spacer portion. A gate cap is formed over the metal gate structure and the upper spacer portion. The second dielectric can include, for example, an oxide or a gas. The method may reduce effective capacitance and gate height loss, and improve gate-to-contact short margin.

A topology-selective deposition method is disclosed. An exemplary method includes providing an inhibition agent comprising a first nitrogen-containing gas, providing a deposition promotion agent comprising a second nitrogen-containing gas to form an activated surface on one or more of a top surface, a bottom surface, and a sidewall surface relative to one or more of the other of the top surface, the bottom surface, and the sidewall surface, and providing a precursor to react with the activated surface to thereby selectively form material comprising a nitride on the activated surface.

A semiconductor device structure is provided. The semiconductor device includes a first nanowire structure over a second nanowire structure, a gate stack wrapping around the first nanowire structure and the second nanowire structure, a source/drain feature adjoining the first nanowire structure and the second nanowire structure, a gate spacer layer over the first nanowire structure and between the gate stack and the source/drain feature, and an inner spacer layer between the first nanowire structure and the second nanowire structure and between the gate stack and the source/drain feature. The gate spacer layer has a first carbon concentration, the inner spacer has a second carbon concentration, and the second carbon concentration is lower than the first carbon concentration.

Disclosed herein are methods for manufacturing IC components using bottom-up fill of openings with a dielectric material. In one aspect, an exemplary method includes, first, depositing a solid dielectric liner on the inner surfaces of the openings using a non-flowable process, and subsequently filling the remaining empty volume of the openings with a fill dielectric using a flowable process. Such a combination method may maximize the individual strengths of the non-flowable and flowable processes due to the synergetic effect achieved by their combined use, while reducing their respective drawbacks. Assemblies and devices manufactured using such methods are disclosed as well.

A process for manufacturing a silicon carbide device from a body of silicon carbide having a back surface, wherein a first layer of a first metal is formed on the back surface of the body; a second layer of a second metal, different from the first metal, is formed on the first layer to form a multilayer, the first or the second metal being nickel or a nickel alloy and forming a nickel-based layer, another of the first or the second metal being a metal X, capable to form stable compounds with carbon and forming an X-based layer; and the multilayer is annealed to form a mixed layer including nickel silicide and at least one of X carbide or a metal X-carbon ternary compound.