A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.

A method for crystallizing an amorphous multicomponent ionic compound comprises applying an external stimulus to a layer of an amorphous multicomponent ionic compound, the layer in contact with an amorphous surface of a deposition substrate at a first interface and optionally, the layer in contact with a crystalline surface at a second interface, wherein the external stimulus induces an amorphous-to-crystalline phase transformation, thereby crystallizing the layer to provide a crystalline multicomponent ionic compound, wherein the external stimulus and the crystallization are carried out at a temperature below the melting temperature of the amorphous multicomponent ionic compound. If the layer is in contact with the crystalline surface at the second interface, the temperature is further selected to achieve crystallization from the crystalline surface via solid phase epitaxial (SPE) growth without nucleation.

A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor a silicon substrate having a silicon dioxide layer; an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric; a first electrode layer on the adhesion layer; a dielectric layer on the first electrode layer; and a second electrode layer on the dielectric layer. Other embodiments are disclosed.

A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.

Described is a low power, high-density non-volatile differential memory bit-cell. The transistors of the differential memory bit-cell can be planar or non-planer and can be fabricated in the frontend or backend of a die. A bit-cell of the non-volatile differential memory bit-cell comprises first transistor first non-volatile structure that are controlled to store data of a first value. Another bit-cell of the non-volatile differential memory bit-cell comprises second transistor and second non-volatile structure that are controlled to store data of a second value, wherein the first value is an inverse of the second value. The first and second volatile structures comprise ferroelectric material (e.g., perovskite, hexagonal ferroelectric, improper ferroelectric).

A method for manufacturing perovskite-based devices, such as solar cells. In ambient air includes steps of forming a perovskite film on a substrate by spin-coating, the perovskite film having a turbid point when the perovskite film transitions from transparent to turbid in appearance, and dropping an antisolvent on the perovskite film during an antisolvent window having a start time five seconds before the turbid point and an end time one second before the turbid point. The method also includes the step of measuring the current relative humidity of the ambient air at the time of manufacture and adjusting the antisolvent window or optimum drop time of the antisolvent based upon the current relative humidity.

A vehicle includes a body and a lamp assembly coupled to the body. The lamp assembly includes a housing and a first metal conductor coupled to the housing. A semiconductor layer is coupled to the first metal conductor, wherein the semiconductor layer includes a plurality of perovskites configured to emit light. A second conductor is coupled to the semiconductor layer and a lens is coupled to the housing.

A core/shell semiconductor nanoparticle structure comprises a core comprising a halide perovskite semiconductor and a shell comprising a semiconductor material that is not a halide perovskite (and that is substantially free of halide perovskites). The halide perovskite semiconductor core may be of the form AMX.sub.3, wherein: A is an organic ammonium such as CH.sub.3NH.sub.3.sup.+, (C.sub.8H.sub.17).sub.2(CH.sub.3NH.sub.3).sup.+, PhC.sub.2H.sub.4NH.sub.3.sup.+, C.sub.6H.sub.11CH.sub.2NH.sub.3.sup.+ or 1-adamantyl methyl ammonium, an amidinium such as CH(NH.sub.2).sub.2.sup.+, or an alkali metal cation such as Li.sup.+, Na.sup.+, K.sup.+, Rb.sup.+ or Cs.sup.+; M is a divalent metal cation such as Mg.sup.2+, Mn.sup.2+, Ni.sup.2+, Co.sup.2+, Pb.sup.2+, Sn.sup.2+, Zn.sup.2+, Ge.sup.2+, Eu.sup.2+, Cu.sup.2+ or Cd.sup.2+; and X is a halide anion (F.sup., Cl.sup., Br.sup., I.sup.) or a combination of halide anions.

There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

[Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm<dr<150, without impairing the data retention property of not less than 10.sup.5 seconds and the data rewrite withstand property of not less than 10.sup.8 times, of those that have hitherto been developed, and the FeFET allowing data to be written with a writing voltage whose absolute value is not more than 3.3 volts.

[Means for Solving] In methods of making a device in which an insulator, a film made of constituent elements of a bismuth layered perovskite crystalline ferroelectric and a metal are sequentially formed in the indicated order on a semiconductor substrate and thereafter are annealed for ferroelectric crystallization, thereby preparing the device composed of the semiconductor, insulator, ferroelectric and metal, a method of making a semiconductor ferroelectric memory element in which the film is composed of Ca. Sr, Bi, Ta and oxygen atoms, the metal is Ir or Pt or an alloy of Ir and Pt, or Ru, and the annealing for ferroelectric crystallization is performed in a mixed gas having oxygen added to nitrogen or a mixed gas having oxygen added to argon.