Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

A film forming method includes adsorbing an aminosilane gas on a substrate having a recess in a surface of the substrate, depositing a silicon oxide film on the substrate by supplying an oxidizing gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate, and performing a modifying process of the silicon oxide film by activating a mixed gas including nitrogen gas and hydrogen gas and supplying the activated mixed gas to the silicon oxide film.

A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.

Silicon-containing films, such as silicon oxide films, having high quality are deposited on semiconductor substrates using reactions of silicon-containing precursors in high temperature ALD processes. In some embodiments, provided precursors are suitable for deposition of silicon-containing films at temperatures of at least about 500° C., such as greater than about 550° C. For example, silicon oxide can be deposited at high temperature by a reaction of the silicon-containing precursor with an oxygen-containing reactant (e.g., O.sub.3 O.sub.2, H.sub.2O) on a substrate's surface. In some implementations, the suitable precursor includes at least one silicon-silicon bond, at least one leaving group (e.g., a halogen), and, optionally, at least one electron-donating group (e.g., an alkyl). The precursors are suitable, in some implementations, for both thermal ALD and for PEALD. In some embodiments, a single precursor is used in both thermal ALD and in PEALD during deposition of a single silicon oxide film.

There is provided a technique that includes (a) forming a first film on the substrate by supplying a film-forming agent to the substrate; (b) adding oxygen to the first film by supplying a first oxidizing agent to the substrate and oxidizing a part of the first film; and (c) changing the oxygen-added first film into a second film including an oxide film by supplying a second oxidizing agent to the substrate and oxidizing the oxygen-added first film.

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

A substrate processing method for gap-filling a recess between a first protrusion and a second protrusion of a pattern structure includes: changing a profile of a layer formed on the pattern structure, wherein the changing of the profile of the layer includes: in an upper area, increasing a width of the recess to suppress formation of a void in the upper area; and, in a lower area, reducing the width of the recess to contact the layer, thereby inducing formation of a void under the lower area, and thus allows a position of the void to be adjusted.

There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.

A substrate processing method of filling a recess without voids or seams includes least partially filling a trench with a first material on a substrate including the trench; and supplying at least one constituent element included in the first material and applying plasma to induce fluidization of the first material.

A structure body includes a base material and a siloxane based molecular membrane formed on the base material by use of an organic compound represented by Formula (1) or Formula (2): ##STR00001##
wherein any one of R1 to R5 is an amino group, others of R1 to R5 are each independently hydrogen or an alkyl group, R7 to R9 are each independently any one of hydroxy group, alkoxy group, alkyl group, and phenyl group on condition that one or more of R7 to R9 are each independently a hydroxy group or an alkoxy group, and R6 is an alkyl group.