A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.

Disclosed herein are magnesium-doped rare earth nitride materials, some of which are semi-insulating or insulating. Also disclosed are methods for preparing the materials. The magnesium-doped rare earth nitride materials may be useful in the fabrication of, for example, spintronics, electronic and optoelectronic devices.

Described herein is a technique capable of preventing a constituent contained in an aluminum alloy from being vaporized and scattered when the aluminum alloy is used in a process vessel which is heated to a high temperature. According to one aspect thereof, there is provided a technique including a process chamber; a substrate support configured to support a substrate in the process chamber; and a heater configured to heat the substrate supported by the substrate support, wherein the substrate support is made of an aluminum alloy containing magnesium, and a surface of the substrate support is coated by a coating film of aluminum oxide containing magnesium oxide and being substantially free of magnesium.