A printed circuit, a thin film transistor and manufacturing methods thereof are provided. The printed circuit includes a plurality of metal nanostructures and a metal oxide layer. The metal oxide layer is disposed on a surface of the metal nanostructures and fills a space at an intersection of the metal nanostructures. The metal oxide layer disposed on the surface of the metal nanostructures has a thickness of 0.1 nm to 10 nm.

A touch substrate manufactured by three-dimensional printing and a method for manufacturing the same are disclosed. The method for manufacturing the touch substrate works together with a three-dimensional printer. The three-dimensional printer includes a first nozzle, a second nozzle, and a light source. The method includes the steps of: jetting a photocuring material by the first nozzle and exposing the photocuring material to the light source to form a base layer; jetting a conductive material on the base layer by the second nozzle and exposing the conductive material to the light source to form a touch electrode layer; and jetting the photocuring material on the base layer and the touch electrode layer by the first nozzle and exposing the photocuring material to the light source to form a protective layer. The touch electrode layer is embedded between the base layer and the protective layer.

The present invention relates to a method for forming a layer, to be patterned, of an element by using a fluorinated material, which has orthogonality, and a solvent, the method comprising: a first step of printing with the fluorinated material so as to form, on a surface of a substrate, a mask template provided with an exposure part and a non-exposure part; a second step of coating the exposure part with a material to be patterned; a the third step of lifting-off the non-exposure part with the fluorinated solvent so as to form the layer to be patterned in the exposure part.

To apply an anti-wetting coating to a substrate of a semiconductor material, a method includes applying to a support a solution of a hydrocarbon comprising at least one unsaturated bond and, optionally, at least one hetero-atom for obtaining a layer of hydrocarbons. The method also includes treating at least one surface of the substrate of the semiconductor material with an acid. The layer of hydrocarbons is transferred from the support to the surface of the substrate of the semiconductor material. The layer of hydrocarbons is chemically coupled with the surface of the substrate of the semiconductor material.

A voltage multiplier includes a supply voltage, at least two multiplier stages electrically connected together, each stage having a trigger voltage terminal, an input terminal, an output terminal, and a capacitor, and each stage connected to the supply voltage, an input stage electrically connected to a first of the at least two multiplier stages, and an output stage electrically connected to a final of the at least two multiplier stages.

An ink jet process is used to deposit a material layer to a desired thickness. Layout data is converted to per-cell grayscale values, each representing ink volume to be locally delivered. The grayscale values are used to generate a halftone pattern to deliver variable ink volume (and thickness) to the substrate. The halftoning provides for a relatively continuous layer (e.g., without unintended gaps or holes) while providing for variable volume and, thus, contributes to variable ink/material buildup to achieve desired thickness. The ink is jetted as liquid or aerosol that suspends material used to form the material layer, for example, an organic material used to form an encapsulation layer for a flat panel device. The deposited layer is then cured or otherwise finished to complete the process.

A method a described which includes depositing a first component of a multicomponent system by means of an inkjet process, and depositing a second component of the multicomponent system by means of an inkjet process.

Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an .sup.1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl.sub.3, when a peak derived from N.sub.3SiH.sub.1 and N.sub.2SiH.sub.2 is referred to as Peak 1 and a peak derived from NSiH.sub.3 is referred to as Peak 2, a ratio (P.sub.1/(P.sub.1+P.sub.2)) of an area (P.sub.1) of Peak 1 relative to a total area (P.sub.1+P.sub.2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (P.sub.A/P.sub.B) of an area (P.sub.A) of Region A relative to an area (P.sub.B) of Region B is greater than or equal to about 1.5.

An integrated electrohydrodynamic jet printing and spatial atomic layer deposition system for conducting nanofabrication includes an electrohydrodynamic jet printing station that includes an E-jet printing nozzle, a spatial atomic layer deposition station that includes a zoned ALD precursor gas distributor that discharges linear zone-separated first and second ALD precursor gases, a heatable substrate plate supported on a motion actuator controllable to move the substrate plate in three dimensions, and a conveyor on which the motion actuator is supported. The conveyor is operative to move the motion actuator between the electrohydrodynamic jet printing station and the spatial atomic layer deposition station so that the substrate plate is conveyable between a printing window of the E-jet printing nozzle and a deposition window of the zoned ALD precursor gas distributor, respectively. A method of conducting area-selective atomic layer deposition is also disclosed.

A method of printing structures on a reconstructed wafer includes positioning a plurality of semiconductor dies on a support substrate, anchoring the plurality of semiconductor dies to the support substrate by printing a plurality of anchors that extend across edges of the semiconductor dies onto the support substrate and thus form a reconstructed wafer, and printing one or more device structures on the pluralities of semiconductor dies while anchored on the support substrate. The printing operations include ejecting droplets of a liquid precursor material and curing the liquid precursor material.