A method includes forming a stack of layers comprising a plurality of semiconductor nanostructures, and a plurality of sacrificial layers. The plurality of semiconductor nanostructures and the plurality of sacrificial layers are arranged alternatingly. The method further includes laterally recessing the plurality of sacrificial layers to form lateral recesses, depositing a first spacer layer extending into the lateral recesses, with the first spacer layer comprising a first dielectric material, depositing a second spacer layer on the first spacer layer, with the second spacer layer comprising a second dielectric material different from the first dielectric material, and trimming the first spacer layer and the second spacer layer to form inner spacers.

A method for processing a substrate on which silicon layers and silicon germanium layers are alternately disposed, includes: forming an oxide layer on a surface layer of a spacer layer based on an oxygen-containing gas radicalized using remote plasma, wherein the spacer layer having a low dielectric constant is formed at least on side surfaces of the silicon layers and the silicon germanium layers; and removing the formed oxide layer by etching.

According to one or more embodiments, a method for manufacturing a semiconductor device includes alternately stacking a first film and a second film on an object to form a multilayer film, then forming a stacked body and a recess by partially removing the multilayer film. A dielectric layer is then formed by applying a composite material to the recess to fill the recess with the dielectric layer. The composite material includes an inorganic material and an organic material. The dielectric layer is then exposed to an oxidizing gas to oxidize the inorganic material and to remove at least part of the organic material from the dielectric layer.

There is provided a technique of forming an insulating film containing silicon oxide. A coating solution containing polysilazane is applied onto a wafer W, the solvent of the coating solution is volatilized, and the coating film is irradiated with ultraviolet rays in nitrogen atmosphere before performing a curing process. Dangling bonds are generated in silicon which is a pre-hydrolyzed site in polysilazane. Therefore, the energy for hydrolysis is reduced, and unhydrolyzed sites are reduced even when the temperature of the curing process is 350° C. Since efficient dehydration condensation occurs, the crosslinking rate is improved, and a dense (good-quality) insulation film is formed. By forming a protective film on the surface of the coating film to which ultraviolet rays irradiated, the reaction of dangling bonds prior to the curing process is suppressed.

Methods for simultaneous generation of a buried oxide (BOX) layer and a trap-rich layer in a silicon substrate are presented. According to one aspect, oxygen is implanted in the silicon substrate such as to form a region of oxygen concentration according to a concentration profile with a peak at a target depth of the BOX layer. According to another aspect, the concentration profile includes a leading-edge profile that is shorter than a trailing-edge profile. According to another aspect, the substrate is annealed to form the BOX layer and a damaged layer immediately below the BOX layer, the damaged layer having a functionality of a trap-rich layer.

A method of forming a semiconductor device includes forming a sacrificial gate structure over a substrate, depositing a spacer layer on the sacrificial gate structure in a conformal manner, performing a multi-step oxidation process to the spacer layer, etching the spacer layer to form gate sidewall spacers on opposite sidewalls of the sacrificial gate structure, removing the sacrificial gate structure to form a trench between the gate sidewalls spacers, and forming a metal gate structure in the trench.

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a plurality of transistors; each of the plurality of transistors includes a first insulator, a first oxide, a second oxide, a first conductor, a second conductor, a third oxide, a second insulator, and a third conductor; the third oxide included in one of the plurality of transistors and the third oxide included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors, are provided to be apart from each other in the channel width direction of the plurality of transistors; the second insulator included in one of the plurality of transistors includes a region continuous with the second insulator included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors; and the third conductor included in one of the plurality of transistors includes a region continuous with the third conductor included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors.

A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.

A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.