A substrate processing method capable of filling a gap structure without forming voids or seams in a gap while minimizing damage to the gap structure includes: forming a first thin film on a structure by performing a first cycle a plurality of times, the first cycle including supplying a first reaction gas onto the structure including a gap and purging a residue, forming a second thin film by changing a chemical composition of the first thin film, and forming a third thin film having the same component as that of the second thin film on the second thin film while filling the gap.

A method for manufacturing a bit line structure includes the following operations. A bit line conductive layer is formed on a surface of a semiconductor substrate, and the bit line conductive layer is partially located in a groove in the surface of the semiconductor substrate. A first protective layer is formed on surfaces of the bit line conductive layer and the semiconductor substrate. A first barrier layer is formed on a surface of the first protective layer. The surface of the first barrier layer is subjected with passivating treatment. A sacrificial layer is formed on the surface of the first barrier layer, and is provided with a filling part filled in the groove. A part, other than the filling part, of the sacrificial layer is cleaned and stripped.

Embodiments of the present disclosure describe techniques for oxidizing plasma post-treatment for reducing photolithography poisoning. In one embodiment, an apparatus includes a dielectric layer with a plurality of routing features; and an etch stop layer, having a first interface region coupled with the dielectric layer and a second interface region disposed opposite to the first interface region. The first interface region has a peak silicon oxide (SiO.sub.2) concentration level evenly distributed across the first interface region, and the second interface region has substantially zero silicon oxide (SiO.sub.2) concentration level. Other embodiments may be described and/or claimed.

Described herein are functionalized cyclosilazane precursor compounds and compositions and methods comprising same to deposit a silicon-containing film such as, without limitation, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, or a combination thereof.

Examples of the present technology include semiconductor processing methods that may include generating a plasma from a deposition precursor in a processing region of a semiconductor processing chamber. The plasma may be generated at a delivered power within a first period of time when plasma power is delivered from a power source operating at a first duty cycle. The methods may further include transitioning the power source from the first duty cycle to a second duty cycle after the first period of time. A layer may be deposited on a substrate in the processing region of the semiconductor processing chamber from the generated plasma. The layer, as deposited, may be characterized by a thickness of 50 Å or less. Exemplary deposition precursors may include one or more silicon-containing precursors, and an exemplary layer deposited on the substrate may include an amorphous silicon layer.

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

Semiconductor device structures having dielectric features and methods of forming dielectric features are described herein. In some examples, the dielectric features are formed by an ALD process followed by a varying temperature anneal process. The dielectric features can have high density, low carbon concentration, and lower k-value. The dielectric features formed according to the present disclosure has improved resistance against etching chemistry, plasma damage, and physical bombardment in subsequent processes while maintaining a lower k-value for target capacitance efficiency.

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

Provided is a method of cyclically depositing a thin film including: performing an oxide depositing operation of repeatedly performing a deposition operation, a first purge operation, a reaction operation, and a second purge operation, wherein the deposition operation deposits silicon on a target by injecting a silicon precursor into a chamber into which the target is loaded, the first purge operation removes a non-reacted silicon precursor and a reacted byproduct from inside the chamber, the reaction operation supplies a first reaction source including oxygen into the chamber to form the deposited silicon as an oxide including silicon, and the second purge operation removes a non-reacted first reaction source and a reacted byproduct from the inside of the chamber; and performing a plasma processing operation of supplying plasma made of a second reaction source including nitrogen to the inside of the chamber to process the oxide including the silicon.

A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.