Techniques are provided to fabricate semiconductor devices. For example, a semiconductor device can include a substrate including a central portion and a pair of outer portions. A first self-assembled monolayer is attached to the central portion of the substrate. A second self-assembled monolayer is attached to the first self-assembled monolayer. A first dielectric layer is disposed on each of the outer portions. A second dielectric layer is disposed on the first dielectric layer.

Embodiments disclosed herein relate to cluster tools for forming and filling trenches in a substrate with a flowable dielectric material. In one or more embodiments, a cluster tool for processing a substrate contains a load lock chamber, a first vacuum transfer chamber coupled to the load lock chamber, a second vacuum transfer chamber, a cooling station disposed between the first vacuum transfer chamber and the second vacuum transfer chamber, a factory interface coupled to the load lock chamber, a plurality of first processing chambers coupled to the first vacuum transfer chamber, wherein each of the first processing chambers is a deposition chamber capable of performing a flowable layer deposition, and a plurality of second processing chambers coupled to the second vacuum transfer chamber, wherein each of the second processing chambers is a plasma chamber capable of performing a plasma curing process.

A method for fabricating a semiconductor device includes forming a first inner spacer layer along a substrate and a nanosheet stack disposed on the substrate, performing an ultraviolet (UV) condensation process to form a hardened inner spacer from the first inner spacer layer, forming a second inner spacer layer along the hardened inner spacer, and removing material to form inner spacers by performing an inner spacer etch.

Methods and apparatuses suitable for encapsulation layers for memory devices at temperatures less than about 300 C. are provided herein. Methods involve introducing a reactive species by pulsing plasma while exposing a substrate to deposition reactants, and post-treating deposited encapsulation films to densify and reduce hydrogen content. Post-treatment methods include periodic exposure to inert plasma without reactants and exposure to ultraviolet radiation at a substrate temperature less than about 300 C.

A semiconductor manufacturing apparatus includes at least one UV lamp provided at a position facing a surface of a semiconductor substrate arranged to irradiate the surface of the semiconductor substrate with UV light, and a shutter disposed between the surface of the semiconductor substrate and the at least one UV lamp and configured to block UV light emitted by the UV lamp. The shutter includes a first movable part movable in a first direction being an in-plane direction parallel to the semiconductor substrate, and a second movable part movable in a second direction being an in-plane direction perpendicular to the first direction, the second movable part being movable independently of the first movable part.

A method includes forming a multi-layer mask over a dielectric layer. Forming the multi-layer mask includes forming a bottom layer over the dielectric layer. A first middle layer is formed over the bottom layer. The first middle layer includes a first silicon-containing material. The first silicon-containing material has a first content of SiCH.sub.3 bonds. A second middle layer is formed over the first middle layer. The second middle layer includes a second silicon-containing material. The second silicon-containing material has a second content of SiCH.sub.3 bonds less than the first content of SiCH.sub.3 bonds.

A semiconductor device and a method of forming the same are provided. The method includes forming a trench in a substrate. A liner layer is formed along sidewalls and a bottom of the trench. A silicon-rich layer is formed over the liner layer. Forming the silicon-rich layer includes flowing a first silicon precursor into a process chamber for a first time interval, and flowing a second silicon precursor and a first oxygen precursor into the process chamber for a second time interval. The second time interval is different from the first time interval. The method further includes forming a dielectric layer over the silicon-rich layer.

Disclosed is a radiation curable polymer formulation and methods of producing a dielectric film having such a formulation. The radiation curable polymer formulation includes an acrylic monomer; a cross linking agent; and a photoinitiator. The polymer formulation is insoluble with an organic solvent, which is preferable in low cost high volume manufacturing of thin film transistors for flexible electronics.

A method of fabricating a semiconductor package includes providing a substrate on a stage, the substrate including semiconductor dies and a modified layer along a partition lane and sequentially having an adhesive film and a base film on a surface thereof so that bottom surfaces of the adhesive film and the base film face the stage and top surfaces of the adhesive film and the base film face away from the stage and the bottom surface of the adhesive film faces the top surface of the base film; separating the semiconductor dies from each other by applying a force to the substrate in a lateral direction; applying a gas pressure to a top surface of each of the semiconductor dies; and irradiating ultraviolet rays toward the adhesive film after applying the gas pressure on the top surface of each of the semiconductor dies.

Embodiments described and discussed herein provide methods for depositing silicon nitride materials by vapor deposition, such as by flowable chemical vapor deposition (FCVD), as well as for utilizing new silicon-nitrogen precursors for such deposition processes. The silicon nitride materials are deposited on substrates for gap fill applications, such as filling trenches formed in the substrate surfaces. In one or more embodiments, the method for depositing a silicon nitride film includes introducing one or more silicon-nitrogen precursors and one or more plasma-activated co-reactants into a processing chamber, producing a plasma within the processing chamber, and reacting the silicon-nitrogen precursor and the plasma-activated co-reactant in the plasma to produce a flowable silicon nitride material on a substrate within the processing chamber. The method also includes treating the flowable silicon nitride material to produce a solid silicon nitride material on the substrate.