A semiconductor body having a first surface is provided. A deep doped region of the semiconductor body is formed using masked ion implantation to implant dopant atoms into a discrete region within the semiconductor body. A structured anti-reflective coating region is formed on a portion of the first surface that is aligned with the deep doped region in a lateral direction of the semiconductor body, the lateral direction being parallel to the first surface. A laser thermal anneal of the deep doped region of the semiconductor body is performed through the anti-reflective coating region thereby activating the implanted dopant atoms in the deep doped region.

An electronic device includes a first substrate, a first wire disposed on a first surface of the first substrate, a second wire disposed on the second surface of the first substrate, and a side wire disposed on a side surface, a chamfer surface and the second surface of the first substrate and electrically connected to the first wire and the second wire. The second surface is opposite the first surface, the side surface is between the first surface and the second surface, and the chamfer surface is between the second surface and the side surface. The side wire has a first portion on the side surface, a second portion on the chamfer surface, and a third portion on the second surface. The width of the second portion is less than or equal to the width of the second wire.

A method for uniformly irradiating a frame of a processed substrate, the processed substrate including a plurality of frames, two consecutive frames being separated by an intermediate zone, the method includes steps of: determining an initial position of the processed substrate using a detecting unit; comparing the detected initial position with a first predetermined position associated with a first frame of the processed substrate; irradiating the first frame of the processed substrate by an irradiation beam emitted by a source unit and scanned by a scanning unit based on the first predetermined position, the irradiation beam being adapted to cover uniformly the whole first frame. A system for uniformly irradiating a frame of a processed substrate is also described.

A laser sintering deposition method is provided for disposing lead selenide onto a substrate. The method includes: wet-milling a lead selenide ingot mixed with methanol into a colloidal slurry containing nanocrystals; separating the colloidal slurry into nanocrystal particles and the methanol; depositing the nanocrystal particles to a substrate; and emitting coherent infrared light onto the nanocrystal particles for fusing into a lead selenide crystalline film. Afterwards, the lead selenide film can be exposed to oxygen to form a lead selenite layer, and subsequently to iodine gas to produce a lead iodide layer onto the lead selenite layer.

Provided is a method for stripping a substrate of a semiconductor structure, including: providing a substrate, a first AlN layer, a first AlGaN layer and a function layer from bottom to top; and irradiating the first AlGaN layer from the substrate with laser light to decompose the first AlGaN layer, such that the function layer is separated from the substrate and the first AlN layer.

A semiconductor structure including a dielectric film wherein stress has been inducted into one or more stressed portions of the dielectric film to create one or more stress zones. The stress zones correspond to locations of warpage in the semiconductor structure and reduce warpage. In some examples, the stress zones can be created by exposing portions of the dielectric film to different amounts of heat. In some examples, the stress zones can be created by one or more recesses in the dielectric film.

A packaged electronic device includes an integrated circuit and an electrically non-conductive encapsulation material in contact with the integrated circuit. A thermal conduit extends from an exterior of the package, through the encapsulation material, to the integrated circuit. The thermal conduit has a thermal conductivity higher than the encapsulation material contacting the thermal conduit. The thermal conduit includes a cohered nanoparticle film. The cohered nanoparticle film is formed by a method which includes an additive process.

A method is provided to form a security barrier of an electronic device under protection. The method includes depositing a transformable dielectric material layer on the electronic device under protection, and converting a target portion of the transformable dielectric material layer into at least one electrical circuit structure having at least one measurable electrical characteristic. The method further includes depositing a thermal stabilizing material layer onto the transformable dielectric material layer.