A method for semiconductor film lift-off and substrate transfer is provided. It includes: preparing a semiconductor film-substrate structure including a first substrate layer, multiple seed crystal structures and a semiconductor film layer stacked in that order, and holes are formed among the multiple seed crystal structures and communicated with one another; lifting-off the multiple seed crystal structures and the semiconductor film layer from the first substrate layer; and bonding a side of the multiple seed crystal structures facing away from the semiconductor film layer with a second substrate layer to complete processes of the semiconductor film lifting-off and the substrate transfer. The method can be compatible with various epitaxial substrate materials, and can also retain smooth surface of the device epitaxial layer film without affecting the subsequent process of growing other functional layers for preparing devices on the epitaxial layer film.

It is an object of the present invention to provide a semiconductor device having high heat dissipation performance. A semiconductor device includes: a diamond substrate having a recess in an upper surface thereof; a nitride semiconductor layer disposed within the recess in the upper surface of the diamond substrate; and an electrode disposed on the nitride semiconductor layer, wherein the nitride semiconductor layer and the electrode constitute a field-effect transistor, the diamond substrate has a source via hole extending through a thickness of the diamond substrate to expose the source electrode, and the semiconductor device further includes a via metal covering an inner wall of the source via hole and a lower surface of the diamond substrate.

Methods of forming SOI substrates are disclosed. In some embodiments, an epitaxial layer and an oxide layer are formed on a sacrificial substrate. An etch stop layer is formed in the epitaxial layer. The sacrificial substrate is bonded to a handle substrate at the oxide layer. The sacrificial substrate is removed. The epitaxial layer is partially removed until the etch stop layer is exposed.

The present disclosure provides systems and methods for a layered substrate. A layered substrate may include a core comprising graphite. The layered substrate may also include a coating layer comprising a coating material that surrounds the core, wherein the coating material has a melting point that is greater than a melting point of silicon.

A method for creating an enhanced multipaction resistant diamond-like coating (DLC) coating with lower Secondary Electron Emission (SEE) properties is performed on an initial surface by etching a DLC coating deposited on the surface after deposition and optionally creating interlayers to enhance adhesion mechanical properties between the DLC coating and the initial surface.

A liquid crystal display device includes a TFT substrate having a first alignment film and an opposing substrate having a second alignment film with liquid crystals sandwiched therebetween. One of the first and second alignment films, comprises a first polyimide produced via polyamide acid ester containing cyclobutane as a precursor and a second polyimide produced via polyamide acid as a precursor. The polyamide acid has a higher polarity than that of the polyamide acid ester. The one of the first and second alignment films is responsive to photo-alignment. A first side of the one of the first and second alignment films is adjacent to the liquid crystals, and a second side thereof is closer to one of the TFT substrate and the counter substrate than the first side. The first side contains more of the first polyimide and less of the second polyimide than the second side.

A provided is a polycrystalline diamond substrate that can reduce the cost for inhibiting warpage. The polycrystalline diamond substrate is a polycrystalline diamond substrate having a first principal surface and a second principal surface, and includes, between the first principal surface and the second principal surface, a surface having an average grain diameter smaller than each of average grain diameters of the first principal surface and the second principal surface.

A silicon wafer is provided in which a dopant is phosphorus, resistivity is 1.2 mΩ.Math.cm or less, and carbon concentration is 3.5×10.sup.15 atoms/cm.sup.3 or more. The carbon concentration is decreased by 10% or more near a surface of the silicon wafer compared with a center-depth of the silicon wafer.

Methods of forming SOI substrates are disclosed. In some embodiments, an epitaxial layer and an oxide layer are formed on a sacrificial substrate. An etch stop layer is formed in the epitaxial layer. The sacrificial substrate is bonded to a handle substrate at the oxide layer. The sacrificial substrate is removed. The epitaxial layer is partially removed until the etch stop layer is exposed.

A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.