The present invention relates to a method of manufacturing semiconductor materials comprising interface layers of group III-V materials in combination with Si substrates. Especially the present invention is related to a method of manufacturing semiconductor materials comprising GaAs in combination with Si(111) substrates, wherein residual strain due to different thermal expansion coefficient of respective materials is counteracted by introducing added layer(s) compensating the residual strain.

A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.

An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5×10.sup.15 cm.sup.−3.

An embodiment includes a device comprising: a first epitaxial layer, coupled to a substrate, having a first lattice constant; a second epitaxial layer, on the first layer, having a second lattice constant; a third epitaxial layer, contacting an upper surface of the second layer, having a third lattice constant unequal to the second lattice constant; and an epitaxial device layer, on the third layer, including a channel region; wherein (a) the first layer is relaxed and includes defects, (b) the second layer is compressive strained and the third layer is tensile strained, and (c) the first, second, third, and device layers are all included in a trench. Other embodiments are described herein.

This infrared detection element includes a buffer layer (InAsSb layer) 3, a buffer layer (InAs layer) 4, and a light absorption layer (InAsSb layer) 5. A critical film thickness hc of the InAs layer satisfies a relation of hc<t with a thickness t of the InAs layer. In this case, it is possible to improve crystallinities of the buffer layer 4 of InAs and the light absorption layer 5 of InAsSb formed on the buffer layer 3.

Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.

The present disclosure relates to a method of manufacturing a nanowire structure. According to an exemplary process, a substrate is firstly provided. An intact buffer region is formed over the substrate, and a sacrificial top portion of the intact buffer region is eliminated to provide a buffer layer with a planarized top surface. Herein, the planarized top surface has a vertical roughness below 10 Å. Next, a patterned mask with an opening is formed over the buffer layer, such that a portion of the planarized top surface of the buffer layer is exposed. A nanowire is formed over the exposed portion of the planarized top surface of the buffer layer through the opening of the patterned mask. The buffer layer is configured to have a lattice constant that provides a transition between the lattice constant of the substrate and the lattice constant of the nanowire.

A second semiconductor layer is oxidized through a groove and a fourth semiconductor layer is oxidized, a first oxide layer is formed, and a second oxide layer is formed. By oxidizing the entire second semiconductor layer and the fourth semiconductor layer, the first oxide layer and the second oxide layer in an amorphous state are formed.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

A semiconductor device comprising a nominally or exactly or equivalent orientation silicon substrate on which is grown directly a <100 nm thick nucleation layer (NL) of a III-V compound semiconductor, other than GaP, followed by a buffer layer of the same compound, formed directly on the NL, optionally followed by further III-V semiconductor layers, followed by at least one layer containing III-V compound semiconductor quantum dots, optionally followed by further III-V semiconductor layers. The NL reduces the formation and propagation of defects from the interface with the silicon, and the resilience of quantum dot structures to dislocations enables lasers and other semiconductor devices of improved performance to be realized by direct epitaxy on nominally or exactly or equivalent orientation silicon.