This disclosure provides apparatuses and methods of manufacturing apparatuses including thin film transistors (TFTs) and storage capacitors. An apparatus can include a substrate, a TFT, a storage capacitor adjacent to the TFT, and a common electrode. The storage capacitor can be substantially transparent to increase aperture ratio of a display device. The storage capacitor can include an insulating layer between a first transparent electrode and a second transparent electrode. The TFT can include a gate electrode, a gate insulating layer, an oxide semiconductor, source and drain electrodes, and a dielectric layer. The oxide semiconductor can be formed out of the same layer as the first transparent electrode, and the common electrode can be formed out of the same layer as the oxide semiconductor or the source and drain electrodes.

A lattice matched epitaxial oxide interlayer is disposed between each semiconductor layer of a graded buffer layer material stack. Each lattice matched epitaxial oxide interlayer inhibits propagation of threading dislocations from one semiconductor layer of the graded buffer layer material stack into an overlying semiconductor layer of the graded buffer layer material stack. This allows for decreasing the thickness of each semiconductor layer within the graded buffer layer material stack. The topmost semiconductor layer of the graded buffer layer material stack, which is a relaxed layer, contains a lower defect density than the other semiconductor layers of the graded buffer layer material stack.

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. A semiconductor layer of a transistor is formed using a composite oxide semiconductor in which a first region and a second region are mixed. The first region includes a plurality of first clusters containing one or more of indium, zinc, and oxygen as a main component. The second region includes a plurality of second clusters containing one or more of indium, an element M (M represents Al, Ga, Y, or Sn), zinc, and oxygen. The first region includes a portion in which the plurality of first clusters are connected to each other. The second region includes a portion in which the plurality of second clusters are connected to each other.

A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short channel effect is hardly caused is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by self-aligned process in which one or more elements selected from Group 15 elements are added to the semiconductor layer with the use of a gate electrode as a mask. The source region and the drain region can have a wurtzite crystal structure.

A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy, in which peak areas, which are obtained by separation of peaks having a peak energy of a metal-oxygen bond attributed to 1s electrons of oxygen, satisfy the following expression.
0.9<D/E  (1)
(D represents a peak area of a component having a peak position in a binding energy range of 529 eV or higher and lower than 531 eV, and E represents a peak area of a component having a peak position in a binding energy range of 531 eV to 532 eV.)

Provided are an oxide semiconductor device and a method for manufacturing same, wherein the oxide semiconductor device according to an embodiment of the inventive concept includes a substrate, and an oxide semiconductor layer on the substrate having different concentration of oxygen vacancy in the thickness direction.

A Schottky source-gated thin film transistor is provided including: a drain contact; an insulating substrate; a source contact made of a Schottky metal; a channel connecting the buried source contact to the drain, the channel made of ZnO; and a Schottky source barrier formed between the source contact and the channel; and a gate; wherein the source contact is positioned below the channel.

A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.

A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

An electronic device including a two-dimensional electron gas is provided. The electronic device includes a substrate, a first material layer disposed on the substrate and formed of a binary oxide, a second material layer disposed on the first material layer and formed of a binary oxide, and a two-dimensional electron gas generated between the first material layer and the second material layer.