A display device that is suitable for increasing in size is achieved. Three or more source lines are provided for each pixel column. Video signals having the same polarity are input to adjacent source lines during one frame period. Dot inversion driving is used to reduce a flicker, crosstalk, or the like.

[Problem] To provide a crystal laminate structure having a -Ga.sub.2O.sub.3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga.sub.2O.sub.3 based substrate 10; and a -Ga.sub.2O.sub.3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga.sub.2O.sub.3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 110.sup.13 to 5.010.sup.20 atoms/cm.sup.3.

One illustrative method disclosed includes, among other things, forming a first dielectric layer and forming first and second conductive structures comprising cobalt embedded in the first dielectric layer. A second dielectric layer is formed above and contacting the first dielectric layer. The first and second dielectric layers comprise different materials, and a portion of the second dielectric layer comprises carbon or nitrogen. A first cap layer is formed above the first and second conductive structures and the second dielectric layer.

Nucleation layers for growth of III-nitride structures, and methods for growing the nucleation layers, are described herein. A semiconductor can include a silicon substrate and a nucleation layer over the silicon substrate. The nucleation layer can include silicon and deep-level dopants. The semiconductor can include a III-nitride layer formed over the nucleation layer. At least one of the silicon substrate and the nucleation layer can include ionized contaminants. In addition, a concentration of the deep-level dopants is at least as high as a concentration of the ionized contaminants.

A display device that is suitable for increasing in size is achieved. Three or more source lines are provided for each pixel column. Video signals having the same polarity are input to adjacent source lines during one frame period. Dot inversion driving is used to reduce a flicker, crosstalk, or the like.

A thin layer of lattice matched wide bandgap semiconductor material having semi-insulating properties is employed as an isolation layer between the substrate and a vertical stack of suspended semiconductor channel material nanosheets. The presence of such an isolation layer eliminates the parasitic leakage path between the source region and the drain region that typically occurs through the substrate, while not interfering with the CMOS device that is formed around the semiconductor channel material nanosheets.

A substrate for semiconductor device includes a substrate, a buffer layer which is provided on the substrate and made of a nitride semiconductor, and a device active layer which is provided on the buffer layer and composed of a nitride semiconductor layer, wherein the buffer layer contains carbon and iron, a carbon concentration of an upper surface of the buffer layer is higher than a carbon concentration of a lower surface of the buffer layer, and an iron concentration of the upper surface of the buffer layer is lower than an iron concentration of the lower surface of the buffer layer. As a result, the substrate for semiconductor device can reduce a leak current in a lateral direction at the time of a high-temperature operation while suppressing a leak current in a longitudinal direction.

Novel materials, material deposition methods, and devices used to generate electrical power from thermal radiators based on thermophotovoltatic (TPV) operating principles using group IV-VI alloys and materials are disclosed. A semiconductor structure comprising (N) stacked junctions, each junction formed of a IV-VI semiconductor alloy and each of said N junctions having a bandgap, where N is an integer and N>1 is disclosed. The semiconductor structure is configured to capture electromagnetic radiation having wavelengths from about 1 m to about 7 m. TPV devices comprising the novel semiconductor structure and methods of making the novel structures and devices are also disclosed.

The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.

A crystal laminate structure includes a Ga.sub.2O.sub.3-based substrate, and a -Ga.sub.2O.sub.3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga.sub.2O.sub.3-based substrate. The -Ga.sub.2O.sub.3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 110.sup.13 atoms/cm.sup.3 and not more than 5.010.sup.20 atoms/cm.sup.3.