A composition, method, and system for directly printing and creating complete functional 3D electronic circuits and devices without any thermal or laser post-processing treatment, by using at least Triphenylamine (TPA) as a powder binding agent. The composition can have mechanical characteristics that allow it to be melted and extruded on a structure, and electrical properties that allow it to function as at least one of a conductor, insulator, resistor, p-type semiconductor, n-type semiconductor, or capacitor.

A forming method includes atomizing a raw material solution to form a raw material mist, mixing raw material mist and carrier gas to form a gas mixture, placing substrate on a stage, forming a film on the substrate by supplying gas mixture to substrate from a gas mixture supply means, and exhausting gas mixture after the film formation by exhaust means, in which a channel plate is arranged above substrate and faces the substrate via a space, a gas mixture flow is formed in the space above the substrate flowing linearly from the gas mixture supply means to the exhaust means such that the gas mixture flow flows along at least a part of a main surface of the substrate, and in the forming step and the exhausting step, at least a temperature T1 of the gas mixture supply means, and a temperature T2 of the channel plate are controlled.

A method prepares hydridosilane oligomers, where the obtainable hydridosilane oligomers are useful. A method can also be used for preparing coating compositions and for preparing a silicon-containing layer.

A composition, method, and system for directly printing and creating complete functional 3D electronic circuits and devices without any thermal or laser post-processing treatment, by using at least Triphenylamine (TPA) as a powder binding agent. The composition can have mechanical characteristics that allow it to be melted and extruded on a structure, and electrical properties that allow it to function as at least one of a conductor, insulator, resistor, p-type semiconductor, n-type semiconductor, or capacitor.

Techniques for growing, at least one of: (a) quantum dots and (b) nano-crystals, on a surface of a material are provided. One method comprises placing a precursor on the surface; adding an antisolvent to the precursor; and growing at least one of the quantum dots and the nanocrystals on the surface.

A film formation apparatus is configured to epitaxially grow a film on a surface of a substrate, and the film formation apparatus may include: a stage configured to allow the substrate to be mounted thereon; a heater configured to heat the substrate; a mist supply source configured to supply mist of a solution that comprises a solvent and a material of the film dissolved in the solvent; a heated-gas supply source configured to supply heated gas that comprises gas constituted of a same material as a material of the solvent and has a higher temperature than the mist; and a delivery device configured to deliver the mist and the heated gas to the surface of the substrate.

The present invention generally relates to a method for preparing structurally unique nanomaterials and the products thereof. In particular, the present invention discloses a method for preparing an array of ultra-narrow nanowire or nanorod on a patterned monolayer supported by a 2D material substrate in a controlled environment, wherein said pattered monolayer comprises a polymerizable amphiphiles such as phospholipid with a terminal amine and wherein said controlled environment comprises a major nonpolar solvent, a trace amount of polar solvent, and a unsaturated aliphatic amine. Gold nanowires (AuNWs) so prepared have a highly controlled diameter of about 2 nm, a length up to about 1000 nm, and an AuNW ordering over an area >100 μm.sup.2.

The present disclosure provides a semiconductor heterojunction. The semiconductor heterojunction includes a bottom semiconductor, a top semiconductor and an electrode substrate. An upper surface of the bottom semiconductor includes a first facet. A lower surface of the top semiconductor includes a second facet, and the lower surface of the top semiconductor is contacted with the upper surface of the bottom semiconductor. The electrode substrate is disposed below the bottom semiconductor.

A composition of matter having a coated silicon substrate with multiple alternating layers of polydopamine and polyallylamine bound copper-indium-gallium oxide (CIGO) nanoparticles on the substrate. A related composition of matter having polyallylamine bound to CIGO nanoparticles to form PAH-coated CIGO nanoparticles. A related CIGO thin film made via conversion of layer-by-layer assembled CIGO nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine or polystyrenesulfonate and then in the CIGO-PAH dispersion to fabricate CIGO films as thick as 1-2 microns.

A film formation apparatus is configured to supply mist of a solution to a surface of a substrate so as to epitaxially grow a film on the surface of the substrate. The film formation apparatus may be provided with: a furnace configured to house and heat the substrate; a reservoir configured to store the solution; a heater configured to heat the solution in the reservoir; an ultrasonic transducer configured to apply ultrasound to the solution in the reservoir so as to generate the mist of the solution in the reservoir; and a mist supply path configured to carry the mist from the reservoir to the furnace.