Methods of forming porous nano-scale or micro-scale structured materials and structured materials formed thereby. Such methods entail providing a donor material and reacting the donor material to form a compound that deposits on a surface of a substrate to produce nano-scale or micro-scale geometric features of the structured material. In particular embodiments, the donor material is in a solution and the reacting step is performed by contacting the surface of the substrate with the solution and directing heat through the solution onto the surface to locally heat a portion of the solution in contact therewith.

A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.

An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer.

A quantum dot includes a salt ligand at an outer surface thereof, the salt ligand including an anion and a cation, the cation having charge transporting properties. A light-emitting device includes an anode, a cathode, and an emissive layer disposed between the anode and the cathode, the emissive layer including multiple instances of the quantum dot. In some embodiments, the emissive layer is a crosslinked layer formed by depositing a mixture including the quantum dots on a layer, and subjecting at least a portion of the mixture to external activation stimuli to form the emissive layer including quantum dots dispersed in a crosslinked matrix.

A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 μm or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 μm or less in film thickness with carrier density that is 1×10.sup.20/cm.sup.3 or less and electron mobility that is 1 cm.sup.2/Vs or more.

A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.

A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors that is provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing gallium, a number of the two or more p-type semiconductors that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

A method may include ejecting, from a nozzle, a first printable ammonium-based chalcogenometalate fluid comprising a first dopant onto a substrate to form a layer of the first printable ammonium-based chalcogenometalate fluid; heating, at a first temperature, the layer of first printable ammonium-based chalcogenometalate fluid to dissipate the first printable ammonium-based chalcogenometalate fluid into a transition metal dichalcogenide having the form MX2 with the first dopant distributed therethrough; ejecting, from the nozzle, a second printable ammonium-based chalcogenometalate fluid comprising a second dopant onto the substrate to form a layer of the second printable ammonium-based chalcogenometalate fluid; and heating, at a second and higher temperature, the layers of first and second printable ammonium-based chalcogenometalate fluid.

A method for preparing a semiconducting thin film and device for carrying out the method, wherein the method includes: (1) providing a liquid-liquid interface; (2) providing at least one layered semiconductor material or its precursor(s) in the form of particles in a solvent in the form of a dispersion; (3) injecting the dispersion at the liquid-liquid interface, in order to obtain an assembly of semiconductor/semiconductor precursor particles; (4) bringing the assembly of into contact with a flexible substrate; and (5) applying a surface pressure to the dispersion to obtain a particle film of semiconductor/semiconductor precursor on the substrate, wherein the first solvent has a higher density than the second solvent.