An etched nickel plated substrate and related methods is disclosed. Specific implementations may include providing a dielectric layer, coupling a layer of copper with a first side of the dielectric layer, plating a first side of the layer of copper with a layer of nickel; forming a patterned layer on the layer of nickel, and spray etching the layer of nickel using an etchant. The method may include holding the etchant on the dielectric layer for a predetermined period of time, and while holding the etchant, etching substantially only the layer of nickel until the layer of nickel may be substantially coextensive with a perimeter of each of a plurality of traces in the layer of copper.

The present disclosure provides a nanotube solution being treated with a molecular additive, a nanotube film having enhanced adhesion property due to the treatment of the molecular additive, and methods for forming the nanotube solution and the nanotube film. The nanotube solution includes a liquid medium, nanotubes in the liquid medium, and a molecular additive in the liquid medium, wherein the molecular additive includes molecules that provide source elements for forming a group IV oxide within the nanotube solution. The molecular additive can introduce silicon (Si) and/or germanium (Ge) in the liquid medium, such that nominal silicon and/or germanium concentrations of the nanotube solution ranges from about 5 ppm to about 60 ppm.

Disclosed a precursor compound for producing a photoactive layer of a thin film solar cell that may be used as a precursor of a CIS, CGS or CIGS thin film that may be used as a photoactive layer of a solar cell, and a production method thereof. The precursor compound is represented by a following Chemical Formula 1: ##STR00001## wherein, in the Chemical Formula 1, X represents indium (In) or gallium (Ga), Y represents chlorine (Cl) or iodine (I), each of R.sub.1, R.sub.2, R.sub.3 and R.sub.4 independently represents a methyl group, a propyl group or an alkyl group having 2 to 10 carbon atoms.

Provided is a crystalline multilayer structure having good semiconductor properties. The crystalline multilayer structure includes a base substrate and a corundum-structured crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide semiconductor thin film is 0.1 μm or less in a surface roughness (Ra).

In one example in accordance with the present disclosure, a printable ammonium-based chalcogenometalate fluid is described. The fluid includes an ammonium-based chalcogenometalate precursor. The printable ammonium-based chalcogenometalate fluid also includes an aqueous solvent and water. The printable ammonium-based chalcogenometalate fluid is printed onto a substrate. In the presence of heat, the aqueous solvent, water, and ammonium-based chalcogenometalate precursor break down to form a transition metal dichalcogenide having the form MX.sub.2.

A method for photon induced material deposition includes providing a first solution, which contains metallate or metal ions, providing a second solution, which contains light sensitive reducing agent, such as semiconductor nanoparticles, mixing the first solution and the second solution to form a reagent on a substrate, and focusing a light source on the reagent to form a mechanically rigid deposition in the focus of the light source.

A substrate processing method includes a liquid film forming step of forming a liquid film, a liquid film heat retaining step of keeping the liquid film warm, a gas phase layer forming step of forming a gas phase layer which holds the processing liquid on a center portion of the liquid film, an opening forming step of forming an opening in the center portion of the liquid film by excluding the processing liquid held by the gas phase layer, a substrate rotating step of rotating the substrate around a rotation axis, and an opening expanding step of expanding the opening, while a state in which the gas phase layer is formed on an inner circumferential edge of the liquid film is maintained, by moving the irradiation region toward a circumferential edge portion of the substrate while the liquid film heat retaining step and the substrate rotating step are performed.

Semiconductor nanocrystals prepared using a mixture of organic ligands (e.g., oxoacids), as well as compositions, kits, and methods of using such semiconductor nanocrystals are disclosed.

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

In a first aspect of a present inventive subject matter, a semiconductor device includes a crystalline oxide semiconductor layer; and at least one electrode electrically connected to the crystalline oxide semiconductor layer. The crystalline oxide semiconductor layer includes at least one trench in the crystalline oxide semiconductor layer at a side of a first surface of the crystalline oxide semiconductor layer. The trench includes a bottom, a side, and at least one arc portion with a radius of curvature that is in a range of 100 nm to 500 nm, and the at least one arc portion is positioned between the bottom and the side, and an angle between the side of the trench and the first surface of the crystalline oxide semiconductor layer is 90° or more.