A method of forming an oxide film is provided. The method may include: supplying mist of a solution including a material of the oxide film dissolved therein to a surface of a substrate while heating the substrate at a first temperature so as to epitaxially grow the oxide film on the surface; and bringing the oxide film into contact with a fluid comprising oxygen atoms while heating the oxide film at a second temperature higher than the first temperature after the epitaxial growth of the oxide film.

A mist generator may include a reservoir storing a solution, a plurality of ultrasonic vibrators, a mist delivery path, and a mist collector. The plurality of ultrasonic vibrators may be disposed under the reservoir and configured to apply ultrasonic vibration to the solution stored in the reservoir to generate mist of the solution in the reservoir. The mist delivery path may be configured to deliver the mist from an inside of the reservoir to an outside of the reservoir. The mist collector may be disposed above the solution in the reservoir, wherein an upper end of the mist collector may be connected to an upstream end of the mist delivery path, a lower end of the mist collector may include an opening, and a width of the mist collector may increase from the upper end toward the opening. The plurality of ultrasonic vibrators may be located directly under the opening.

An etched nickel plated substrate and related methods is disclosed. Specific implementations may include providing a dielectric layer, coupling a layer of copper with a first side of the dielectric layer, plating a first side of the layer of copper with a layer of nickel; forming a patterned layer on the layer of nickel, and spray etching the layer of nickel using an etchant. The method may include holding the etchant on the dielectric layer for a predetermined period of time, and while holding the etchant, etching substantially only the layer of nickel until the layer of nickel may be substantially coextensive with a perimeter of each of a plurality of traces in the layer of copper.

An amorphous metal oxide semiconductor layer is formed by use of a precursor composition containing a metal salt, a primary amide, and a water-based solution. The amorphous metal oxide semiconductor layer produced via a method that includes applying the precursor composition onto a substrate to form a precursor film, and firing the film at a temperature of 150 C. or higher and lower than 300 C.

The present invention relates to a radiation-resistant metal oxide semiconductor composition containing zinc-indium-tin oxide (ZITO) exhibiting radiation resistance, and a preparation method and use thereof. In the present invention, the radiation-resistant metal oxide semiconductor composition containing ZITO exhibiting radiation resistance is used in an electronic device for radiation exposure, which is used in outer space, nuclear power plants, or in spaces where medical or security devices are utilized by means of radiation, and thus, the damage caused by radiation can be prevented, thereby improving the electrical properties of the device (e.g., turn-on voltage (V.sub.on)), and the life-span and reliability thereof.

A free-standing substrate of a polycrystalline nitride of a group 13 element contains a plurality of monocrystalline particles having a particular crystal orientation in approximately a normal direction. The polycrystalline nitride of the group 13 element is composed of gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof. The free-standing substrate has a top surface and bottom surface. The free-standing substrate contains at least one of zinc and calcium. A root mean square roughness Rms at the top surface is 3.0 nm or less.

In a first aspect of a present inventive subject matter, a crystalline oxide semiconductor film includes a crystalline oxide semiconductor that contains a corundum structure as a major component, a dopant, and an electron mobility that is 30 cm.sup.2/Vs or more.

The present invention relates to a process for producing a layer of crystalline A/M/X material, wherein the process comprises disposing on a substrate a precursor composition comprising: (a) a first precursor compound comprising a first cation (M), which first cation is a metal or metalloid cation; and (b) a solvent, wherein the solvent comprises; (i) acetonitrile, propionitrile, acetone or a mixture thereof; and (ii) an alkylamine. The invention also relates to a composition comprising: (i) a compound of formula MX.sub.n, (ii) a compound of formula AX, (iii) acetonitrile, propionitrile, acetone or a mixture thereof; and (iv) an alkylamine of formula R.sup.ANH.sub.2, wherein R.sup.A is a C.sub.1-8 alkyl group.

An electronic device includes a first electrode, and a second electrode spaced apart from the first electrode. The electronic device further includes a conduction channel in electrical connection with the first and second electrodes so as to be able to conduct a charge carrier current between the first and second electrodes along a condition path during an operating condition. The conduction channel has a gradient semiconductor oxide composition transverse to the conduction path such that the gradient semiconductor oxide composition varies from indium rich to gallium rich.

The present invention relates to a method for producing a thin nitrogen-free layer of silicon carbide by means of a carbon- and silicon-containing solution or dispersion.