The method of manufacturing a structure comprising one or several strained semiconducting zones capable of forming one or several transistor channel regions, the method including the following steps: a) providing a substrate coated with a masking layer wherein there are one or several first slits exposing one or several first oblong semiconducting portions made of a first semiconducting material and extending in a first direction, b) making a second semiconducting material grow with a mesh parameter different from the mesh parameter of the first semiconducting material, so as to form one or several first semiconducting blocks strained along the first direction, on said one or several first oblong semiconducting portions.

A method of fabricating at least one single-crystal alloy semiconductor structure. At least one seed, containing an alloying material, on a substrate for growth of at least one single-crystal alloy semiconductor structure is formed. At least one structural form, formed of a host material, on the substrate is crystallized to form the at least one single-crystal alloy semiconductor structure. The at least one structural form is heated such that the material of the at least one structural form has a liquid state. Also, the at least one structural form is cooled, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in a main body of the respective structural form away from the respective seed.

A method for obtaining a smooth surface of an epi-layer with epitaxial lateral overgrowth. The method does not use mis-cut orientations and does not suppress the occurrence of pyramidal hillocks, but instead embeds the pyramidal hillocks in the epi-layer. A growth restrict mask is used to limit the expansion of the pyramidal hillocks in a lateral direction. The surface of the epi-layer becomes extremely smooth due to the disappearance of the pyramidal hillocks.

Methods of forming structures with electrical isolation. A dielectric layer is formed over a semiconductor substrate, openings are patterned in the dielectric layer that extend to the semiconductor substrate, and a semiconductor material is epitaxially grown from portions of the semiconductor substrate that are respectively exposed inside the openings. The semiconductor material, during growth, defines a semiconductor layer that includes first portions respectively coincident with the openings and second portions that laterally grow from the first portions to merge over a top surface of the dielectric layer. A modified layer containing a trap-rich semiconductor material is formed in the semiconductor substrate.

A process for manufacturing an optoelectronic device having a diode matrix with semiconductor stacks involves providing a growth substrate having a support substrate coated with a nucleation layer defining a nucleation surface. A dielectric layer is deposited on the nucleation surface. A plurality of through-holes, extending to the nucleation surface, are formed in the dielectric layer. The nucleation layer, located in the through-holes, is etched to free up an upper surface of the support surface and expose a lateral surface of the nucleation layer forming a lateral nucleation surface. A dielectric region is formed extending in the support substrate such that, during a subsequent epitaxial growth stage, each first doped portion is formed especially from the lateral nucleation surface. In the through-holes and from the nucleation surface, the semiconductor stacks are epitaxially grown such that at least the first doped portions and active zones thereof are located in the through-holes.

Transistor structures with monocrystalline metal chalcogenide channel materials are formed from a plurality of template regions patterned over a substrate. A crystal of metal chalcogenide may be preferentially grown from a template region and the metal chalcogenide crystals then patterned into the channel region of a transistor. The template regions may be formed by nanometer-dimensioned patterning of a metal precursor, a growth promoter, a growth inhibitor, or a defected region. A metal precursor may be a metal oxide suitable, which is chalcogenated when exposed to a chalcogen precursor at elevated temperature, for example in a chemical vapor deposition process.

There is provided a crystalline film including, a crystalline metal oxide as a major component; a corundum structure; a dislocation density of 1×10.sup.7 cm.sup.−2 or less; and a surface area of 10 mm.sup.2 or more. There is provided a method of producing a crystalline film comprising, forming a first lateral crystal growth layer on a substrate by first lateral crystal growth; placing a mask on the first lateral crystal growth layer; and forming a second lateral crystal growth layer by second lateral crystal growth.

Epitaxial lateral overgrowth (ELO) III-nitride layers are grown on or above an opening area of a growth restrict mask deposited on a substrate, wherein the growth of the ELO III-nitride layers and/or a subsequent regrowth layer form one or more voids. III-nitride device layers are grown on or above the ELO III-nitride layers and/or regrowth layer. Stress is applied to a breaking point at the substrate, with the voids assisting the application of stress, so that a bar of devices comprised of the III-nitride device layers, the ELO III-nitride layers and the regrowth layer is removed from the substrate. The voids release stress from the growth restrict mask, which helps prevent cracks. Decomposition of the growth restrict mask is avoided to prevent compensation of p-type layers.

A diode is disclosed. The diode includes a semiconductor substrate, a hard mask formed above the substrate, vertically oriented components of a first material adjacent sides of the hard mask, and laterally oriented components of the first material on top of the hard mask. The laterally oriented components are oriented in a first direction and a second direction. The diode also includes a second material on top of the first material. The second material forms a Schottky barrier.

A second semiconductor layer is oxidized through a groove and a fourth semiconductor layer is oxidized, a first oxide layer is formed, and a second oxide layer is formed. By oxidizing the entire second semiconductor layer and the fourth semiconductor layer, the first oxide layer and the second oxide layer in an amorphous state are formed.