A method for fabrication of growing, in one growth run, at least one group of III-V n-type nanowires and at least one group of III-V p-type nanowires using gold particles, where the gold particles are of one size for the III-V n-type nanowires and one size for the III-V p-type nanowires.

Provided is a method for growing a nanowire, including: providing a substrate with a base portion having a first surface and at least one support structure extending above or below the first surface; forming a dielectric coating on the at least one support structure; forming a photoresist coating over the substrate; forming a metal coating over at least a portion of the dielectric coating; removing a portion of the dielectric coating to expose a surface of the at least one support structure; removing a portion of the at least one support structure to form a nanowire growth surface; growing at least one nanowire on the nanowire growth surface of a corresponding one of the at least one support structure, wherein the nanowire comprises a root end attached to the growth surface and an opposing, free end extending from the root end; and elastically bending the at least one nanowire.

A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or comprises at least one non carbon group (IV) element.

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate, a first source portion and a first drain portion over the substrate, and a first semiconductor nanowire over the substrate and between the first source portion and the first drain portion. The first semiconductor nanowire includes a first portion over the substrate and a second portion over the first portion, and the first portion has a first width, and the second portion has a second width, and the second width is less than the first width. The semiconductor device structure also includes a first gate structure over the second portion of the first semiconductor nanowire.

A method of manufacturing a semiconductor structure includes providing a substrate, disposing a first semiconductive material over the substrate at a first temperature, disposing a second semiconductive material over the first semiconductive material at a second temperature, and disposing a third semiconductive material over the second semiconductive material at a third temperature, wherein a first interval between the first temperature and the second temperature is substantially same as a second interval between the second temperature and the third temperature.

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate, a first source portion and a first drain portion over the substrate, and a first semiconductor nanowire over the substrate and between the first source portion and the first drain portion. The first semiconductor nanowire includes a first portion over the substrate and a second portion over the first portion, and the first portion has a first width, and the second portion has a second width, and the second width is less than the first width. The semiconductor device structure also includes a first gate structure over the second portion of the first semiconductor nanowire.

A method for detection and monitoring a therapeutic effect of a cancer treatment drug is disclosed. The method includes steps of removing a malignant biological cell lines from a tumor; culturing the removed biological cell lines in a controlled set of conditions; seeding the cultured biological cell lines on silicon nanowire electrode arrays of an electrical cell-substrate impedance sensor (ECIS); adding a cancer treatment drug to the seeded biological cell lines to treat the seeded biological cell lines; and measuring an electrical impedance of the treated biological cell lines for detection and monitoring a therapeutic effect of the cancer treatment drug.

A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or comprises at least one non carbon group (IV) element.

A method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate, includes: a) forming on the substrate, metal aggregates capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires in the presence of one or more non-dopant precursor gases of the first semiconductor material, the substrate being heated to a temperature at which the metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires in the vapor phase being catalyzed by the metal aggregates; c) rendering the residual metal aggregates inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between the nanowire and the at least one doped thin film.

A method for manufacturing a semiconductor device has a first step including a step of forming an oxide semiconductor film, a second step including a step of forming a gate insulating film over the oxide semiconductor film and a step of forming a gate electrode over the gate insulating film, a third step including a step of forming a nitride insulating film over the oxide semiconductor film and the gate electrode, a fourth step including a step of forming an oxide insulating film over the nitride insulating film, a fifth step including a step of forming an opening in the nitride insulating film and the oxide insulating film, and a sixth step including a step of forming source and drain electrodes over the oxide insulating film so as to cover the opening. In the third step, the nitride insulating film is formed through at least two steps: plasma treatment and deposition treatment. The two steps are each performed at a temperature higher than or equal to 150 C. and lower than 300 C.