Provided is a method of manufacturing a nanowire semiconductor device, the method including: forming a seed layer on a substrate; forming, on the seed layer, a multilayer in which a first conductive layer, a semiconductor layer, a second conductive layer are sequentially stacked; forming a vertical nanowire above the substrate by patterning the multilayer; crystallizing the vertical nanowire by heat treatment; forming an insulating layer covering the vertical nanowire; forming a gate surrounding a channel area by the semiconductor silicon layer of the vertical nanowire; and forming a metal pad electrically connected to the gate, the first conductive layer, and the second conductive layer.

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

The present invention generally relates to a method of making graphene and graphene devices.

A semiconductor device includes a semiconductor layer containing metal atoms, a charge storage layer provided on a surface of the semiconductor layer via a first insulating film, and an electrode layer provided on a surface of the charge storage layer via a second insulating film. The thickness of the first insulating film is 5 nm or more and 10 nm or less. The concentration of the metal atoms in the semiconductor layer is 5.010.sup.17 [EA/cm.sup.3] or higher and 1.310.sup.20 [EA/cm.sup.3] or lower.

A method of producing a crystalline silicon film includes forming a first silicon film that is amorphous at formation, forming a doped film of silicon or germanium on the first silicon film, the doped film being amorphous at formation; and annealing the structure to crystallize the doped film and the first silicon film. A method of producing a crystalline silicon film includes forming a Si.sub.x1Ge.sub.1-x1 film on a substrate, forming a Si.sub.x2Ge.sub.1-x2 film on the Si.sub.x1Ge.sub.1-x1 film, the Si.sub.x1Ge.sub.1-x1 film being amorphous at formation and having a first thermal budget for crystallization, the Si.sub.x2Ge.sub.1-x2 film being amorphous at formation and having a second thermal budget for crystallization, the second thermal budget being lower than the first thermal budget, forming a silicon film on the Si.sub.x2Ge.sub.1-x2 film, the silicon film being amorphous at formation; and annealing to crystallize the Si.sub.x1Ge.sub.1-x1 film, the Si.sub.x2Ge.sub.1-x2 film, and the silicon film.

A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.

Methods of forming semiconductor devices are provided. One of the methods includes following steps. A plurality of hard mask patterns is formed around a region of a substrate, wherein an imaginary connecting line is formed between corners of two of the plurality of hard mask patterns at the same side of the region, and the imaginary connecting line is substantially parallel to or perpendicular to a horizontal direction. A semiconductor layer is formed on the substrate by a selective epitaxial growth process.

A method of preparing crystalline graphene includes performing a first thermal treatment including supplying heat to an inorganic substrate in a reactor, introducing a vapor carbon supply source into the reactor during the first thermal treatment to form activated carbon, and binding of the activated carbon on the inorganic substrate to grow the crystalline graphene.

A three-dimensional polycrystalline semiconductor material provides a major ingredient forming individual crystalline grains having a nominal maximum grain diameter less than or equal to 50 nm, and a minor ingredient forming boundaries between the individual crystalline grains.

The present invention generally relates to a method of making graphene and graphene devices.