Provided is a laser annealing device provided with an irradiation unit in which a plurality of lens arrays each comprising one or more lenses are arranged at a first interval, wherein, while scanning a substrate having: a plurality of first area arrays each of which comprises one or more areas to be irradiated and which are arranged at the first interval; and a plurality of second area arrays which are arranged apart from the first area arrays toward one side in a direction orthogonal to the first area arrays by a second interval smaller than the first interval, the irradiation unit irradiates the areas to be irradiated with a laser beam through the one or more lenses. At least one type of area array, in one pixel unit row that comprises a plurality of area arrays including the first and second area arrays, is irradiated with a laser by use of a lens array different from the ones used for the other types of area arrays.

A laser crystallization device includes a laser oscillator, a stage, and a reflection unit. The stage is configured to support a substrate with a target film disposed on the substrate. The laser oscillator is configured to irradiate an incident laser beam on the target film. The stage is configured to move the substrate such that the incident laser beam scans the target film. The incident laser beam is reflected from the target film to generate a reflected laser beam. The reflection unit includes at least two reflection mirrors positioned at a path of the reflected laser beam. The reflection unit is configured to re-irradiate the reflected laser beam on the target film two or more times through a plurality of paths that are different from a path of the incident laser beam.

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

A laser irradiation device includes a light source that generates a laser beam, a projection lens that irradiates a predetermined region of an amorphous silicon thin film, mounted on each of a plurality of thin-film transistors on a glass substrate moving in a predetermined direction, with the laser beam, and a projection mask pattern provided on the projection lens and has a plurality of columns each including a predetermined number of opening portions and provided parallel to the predetermined direction, in which the projection lens emits the laser beam through the projection mask pattern, and the projection mask pattern is configured such that at least some of the predetermined number of opening portions are not on a straight line parallel to the predetermined direction in each of the plurality of columns.

A method and device for manufacturing low temperature poly-silicon, and a laser assembly are provided. A method for manufacturing low temperature poly-silicon includes forming an amorphous silicon layer on a substrate; controlling a relative movement of a laser assembly to the substrate in a direction perpendicular to a thickness of the substrate, and controlling a laser beam emitted from the laser assembly to irradiate the amorphous silicon layer on the substrate, to recrystallize an amorphous silicon in a region to be irradiated with the laser beam in the amorphous silicon layer. In a direction of the substrate moving relative to the laser assembly, energy of the laser beam emitted by the laser assembly in a same period of time decreases gradually.

A laser annealing method includes selecting a reference intensity from a plurality of intensities of a plurality of peaks; where the reference intensity is used to determine a pulse shape of laser irradiation during laser annealing, setting the pulse shape by setting an intensity ratio of a first peak having a smallest peak occurrence time among the plurality of peaks to less than about 100 percent relative to the reference intensity, and irradiating a laser beam having the pulse shape to a stage.

A laser irradiation apparatus includes a light source configured to generate a laser beam, a projection lens configured to irradiate a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate with the laser beam, and a projection mask pattern provided on the projection lens and including a plurality of masks to which transmittances that are proportions of laser beams passing therethrough are set, wherein the projection lens irradiates the plurality of thin film transistors on the glass substrate moving in a predetermined direction with the laser beam via the plurality of masks included in the projection mask pattern, and each of the plurality of masks included in the projection mask pattern is set to any one of the plurality of transmittances.

A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first energy density to an amorphous silicon layer including an oxidation layer thereon, to form a first polysilicon layer including thereon portions of the oxidation layer at grain boundaries of the first polysilicon layer; removing the portions of the oxidation layer at the grain boundaries of the first polysilicon layer; and irradiating a second excimer laser beam having a second energy density of 80% to 100% of the first energy density to the first polysilicon layer from which the portions of the oxidation layer at the grain boundaries thereof are removed, to form a second polysilicon layer as the polysilicon layer of the thin film transistor.

A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101); a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

A laser irradiation apparatus includes a light source that generates a laser beam, a projection lens that radiates the laser beam onto a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, and a projection mask pattern provided on the projection lens and has a plurality of openings so that the laser beam is radiated onto each of the plurality of thin film transistors, wherein the projection lens radiates the laser beam onto the plurality of thin film transistors on the glass substrate, which moves in a predetermined direction, through the projection mask pattern, and the projection mask pattern is provided such that the openings are not continuous in one column orthogonal to the moving direction.