A manufacturing method and apparatus of low temperature polycrystalline silicon, and a polycrystalline silicon are provided. The manufacturing method of low temperature polycrystalline silicon includes forming an amorphous silicon layer on a substrate; scanning the amorphous silicon layer by using a laser to emit a strip-shaped laser beam to go through a mask which includes transmissive stripes and partially-transmissive stripes arranged alternately, to form low temperature fusion regions and high temperature fusion regions which are arranged alternately on the amorphous silicon layer; recrystallizing the amorphous silicon layer from the low temperature fusion regions to the high temperature fusion regions.

A laser crystallization device includes a laser oscillator, a stage, and a reflection unit. The stage is configured to support a substrate with a target film disposed on the substrate. The laser oscillator is configured to irradiate an incident laser beam on the target film. The stage is configured to move the substrate such that the incident laser beam scans the target film. The incident laser beam is reflected from the target film to generate a reflected laser beam. The reflection unit includes at least two reflection mirrors positioned at a path of the reflected laser beam. The reflection unit is configured to re-irradiate the reflected laser beam on the target film two or more times through a plurality of paths that are different from a path of the incident laser beam.

To provide a laser annealing apparatus which is high efficiency of irradiation energy and capable of achieving uniformity in density of irradiation energy in a region irradiated with a laser beam.

SOLVING MEANS

Scheduled treatment regions of a treatment film are each defined in the form of a strip extending in a scanning direction. Irradiation surface areas of line beams are oriented to be inclined relative to the scanning direction within respective scheduled treatment regions.

A laser treatment device performing treatment by irradiating a target object having a plate surface with laser light, including: a light-transmitting region transmitting laser light emitted onto the target object; a rectifier that has a rectifier surface separated from the target object and extending along the plate surface of the target object and outward from the end of the light-transmitting region; a gas supply unit that feeds a gas to a gap between one side of the rectifier surface and the light-transmitting region, in a position separated from the light-transmitting region; and a gas exhaust unit that exhausts, on the other side that is on the other side of the light-transmitting region from the one side, the gas present in a gap between the rectifier surface and the target object from the gap, in a position separated from the light-transmitting region, thereby generating a stable local gas atmosphere.

A laser irradiation apparatus (1) according to one embodiment includes a laser generating device (14) that generates a laser beam, a flotation unit (10) that causes a workpiece (16) that is to be irradiated with the laser beam to float, and a conveying unit (11) that conveys the floating workpiece (16). The conveying unit (11) conveys the workpiece (16) with the conveying unit (11) holding the workpiece (16) at a position where the conveying unit (11) does not overlap an irradiation position (15) of the laser beam. The laser irradiation apparatus (1) according to one embodiment makes it possible to suppress uneven irradiation with a laser beam.

A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.

A laser crystallization apparatus includes light sources that emit a first laser beam and a second laser beam; a first beam homogenizer through which the first laser beam passes; a second beam homogenizer through which the second laser beam passes; and an optical array on which the first laser beam passed through the first beam homogenizer and the second laser beam passed through the second beam homogenizer are incident. A first path of the first laser beam passed through the first beam homogenizer and a second path of the second laser beam passed through the second beam homogenizer are different from each other. The first beam homogenizer includes first lenses having a first pitch. The second beam homogenizer includes second lenses having a second pitch. The first pitch of the first lenses and the second pitch of the second lenses are same each other.

A laser annealing apparatus according to an embodiment includes a laser light source, an annealing optical system, a linear irradiation region along a Y-direction, a moving mechanism configured to change a relative position of the irradiation region with respect to the substrate along an X-direction, an illumination light source configured to generate illumination light for illuminating the substrate along a third direction, and a detector configured to detect detection light reflected, in a fourth direction, on the substrate illuminated by the illumination light so as to photograph an annealed part of the substrate in a linear field of view along the Y-direction. In a YZ-plane view, the third direction is inclined from the vertical direction and the fourth direction is inclined from the vertical direction.

A method for manufacturing a semiconductor crystalline thin film according to a viewpoint of the present disclosure includes radiating first pulsed laser light having a first pulse duration to an amorphous semiconductor to poly-crystallize the amorphous semiconductor and radiating second pulsed laser light having a second pulse duration shorter than the first pulse duration to an area of a semiconductor crystal having undergone the poly-crystallization to lower the height of ridges of the semiconductor crystal.

A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.