A laser irradiation apparatus includes: a laser module configured to emit a laser beam; a first optical system configured to scan the laser beam emitted from the laser module along a first direction; an optical element configured to refract the laser beam emitted from the first optical system; and a substrate supporter on which a base substrate to which the laser beam refracted through the optical element reaches is arranged.

A method for manufacturing a semiconductor film capable of forming a semiconductor film with high crystalline quality using a solid-state laser is provided. A method for manufacturing a semiconductor film according to the present disclosure includes the steps of (a) irradiating an amorphous semiconductor film with a first pulsed laser beam emitted from a solid-state laser, and then after the step (a), (b) irradiating the semiconductor film with a second pulsed laser beam including intensity lower than that of the first pulsed laser beam.

A surface treating method and apparatus include operating a quasi-continuous wave fiber laser and pre-scan shaping the laser beam such that an instantaneous spot beam has predetermined geometrical dimensions, intensity profile, and power; operating a scanner at an optimal angular velocity and angular range to divide the pre-scan beam into at least one sub-beam deflected toward the surface being processed; guiding the sub-beam through a post-scan optical assembly to provide the spot beam with predetermined geometrical dimensions, power, and angular velocity and range, which are selected such that the instantaneous spot beam is dragged in a scan direction over a desired length at a desired scan velocity, which allow the treated surface to be exposed for a predetermined exposure duration and have a predetermined fluence distribution providing the treated surface with a quality comparable to that of the surface processed by an excimer laser or a burst-mode fiber laser.

A laser annealing method is for irradiating an amorphous silicon film formed on a substrate 6 with laser beams and crystalizing the amorphous silicon film, wherein a plurality of first and second TFT formation portions 23, 24 on the substrate 6 are irradiated with laser beams at differing irradiation doses so as to crystalize the amorphous silicon film in the first TFT formation portions 23 into a polysilicon film having a crystalline state and crystalize the amorphous silicon film in the second TFT formation portions 24 into a polysilicon film having another crystalline state that is different from that of the polysilicon film in the first TFT formation portions 23.

A laser annealing device includes a stage, a laser generator, and a reflective member. The stage supports a substrate with a thin film formed thereon to be processed, and may be moved in a first direction at a set or predetermined speed. The laser generator irradiates a first area of the thin film with a laser beam while the stage is moved. The reflective member reflects a part of the laser beam, which is reflected from the first area of the thin film, to a second area of the thin film. The first area and the second area are spaced apart from each other.

A laser annealing method includes: step A of providing a substrate having an amorphous semiconductor film formed on a surface thereof; and step B of selectively irradiating a portion of the amorphous semiconductor film with laser light. The step B includes a step of simultaneously forming, in the portion, two molten regions that have elongate shapes congruent to each other and are arranged in line symmetry with each other.

A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.

Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.

A substrate-floatation-type laser processing apparatus and a method for measuring a floating height, capable of improving performance of laser processing are provided. A substrate-floatation-type laser processing apparatus according to an embodiment includes a stage configured to float and convey a substrate, and a floating-height measurement apparatus configured to measure a floating height H of the substrate. Note that a distance between the floating-height measurement apparatus and the substrate can be automatically adjusted according to the measured floating height H. The floating height H of the substrate is measured by applying laser light to the substrate and the stage. The distance between the floating-height measurement apparatus and the substrate is adjusted by using a feedback mechanism in which the measured floating height of the substrate is used as an input.

A laser irradiation apparatus includes a light source that generates a laser beam, a projection lens that radiates the laser beam onto a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, and a projection mask pattern provided on the projection lens and has a plurality of openings so that the laser beam is radiated onto each of the plurality of thin film transistors, wherein the projection lens radiates the laser beam onto the plurality of thin film transistors on the glass substrate, which moves in a predetermined direction, through the projection mask pattern, and the projection mask pattern is provided such that the openings are not continuous in one column orthogonal to the moving direction.