Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

Embodiments disclosed herein include a processing system and a method of forming a contact. The processing system includes a plurality of process chambers configured to deposit, etch, and/or anneal a source/drain region of a substrate. The method includes depositing a doped semiconductor layer over a source/drain region, forming an anchor layer in a trench, and depositing a conductor in the trench. The method of forming a contact results in reduced contact resistance by using integrated processes, which allows various operations of the source/drain contact formation to be performed within the same processing system.

A semiconductor device includes a substrate, semiconductor 2-D material layer, a conductive 2-D material layer, a gate dielectric layer, and a gate electrode. The semiconductor 2-D material layer is over the substrate. The conductive 2-D material layer extends along a source/drain region of the semiconductor 2-D material layer, in which the conductive 2-D material layer comprises a group-IV element. The gate dielectric layer extends along a channel region of the semiconductor 2-D material layer. The gate electrode is over the gate dielectric layer.

Methods for depositing tellurium-containing films on a substrate are described. The substrate is exposed to a tellurium precursor and a reactant to form the tellurium-containing film (e.g., elemental tellurium, tellurium oxide, tellurium carbide, tellurium silicide, germanium telluride, antimony telluride, germanium antimony telluride). The exposures can be sequential or simultaneous.

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl.sub.5 or WCl.sub.6.

A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.

A method of manufacturing a semiconductor device according to the present invention includes a step of forming an opening portion in a resist coated on a substrate, a step of coating a thermally-shrinking shrink agent on the resist to fill the opening portion with the shrink agent, a shrinking step of heating and thermally shrinking the shrink agent to reduce a width of the opening portion, a removing step of removing the shrink agent after the shrinking step, a step of forming a metal layer on the resist and in the opening portion after the removing step and a step of removing a portion of the metal layer above the resist and the resist, wherein in the shrinking step, a side surface of the resist forming the opening portion forms a curved surface protruding toward a center portion of the opening portion.

The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

The present disclosure provides a thin film transistor, including: an active layer, a source and a drain electrically coupled with the active layer, and a plurality of doped layers located between the source and the active layer and between the drain and the active layer, a resistance of one of the plurality of doped layers farthest away from the active layer is smaller than that of any other doped layer. The disclosure further provides a gate driving circuit, a display substrate and a display device. With the present disclosure, current loss of a current passing through the doped layers of the thin film transistor is reduced, on-state current of the thin film transistor is improved and a situation that output signals of the thin film transistor are insufficient is avoided.

Provided is a precursor for chemical vapor deposition for depositing a zinc-containing thin film. Bis(alkyltetramethylcyclopentadienyl)zinc represented by the formula (1) which is liquid at room temperature and is therefore easy to handle (in the formula (1), R.sup.1 and R.sup.2 are alkyl group having 3 carbon atoms); a precursor for chemical vapor deposition comprising bis(alkyltetramethylcyclopentadienyl)zinc represented by the formula (2) (in the formula (2), R.sup.3 and R.sup.4 are alkyl group having 2-5 carbon atoms); and a production method for a zinc-containing thin film through chemical vapor deposition.