A method of fabricating a semiconductor device includes forming a dielectric layer on a lower structure. The method includes forming an opening to penetrate through the dielectric layer. The method includes alternately repeating a first operation, in which a first sputtering deposition process is performed to form a first metal pattern in the opening, and a second operation, in which a second sputtering deposition process is performed to form a second metal pattern in the opening, two or more times to form a first metal layer. The method includes forming a second metal layer on the first metal layer in an electroplating manner, and planarizing the first and second metal layers. Moreover, first and second process times, during which the first sputtering deposition process and the second sputtering deposition process, respectively, are performed, are each about five seconds or less.

Superconducting through substrate vias (STSVs) are disclosed. The STSVs provide superconducting interconnections between opposite faces of a substrate. In an example, a method of forming STSVs includes etching openings that extend from a first side of a substrate partially through the substrate towards a second side of the substrate. The method also includes depositing a seed layer over the first side of the substrate and interior surfaces of the openings in the substrate. The method further includes forming a resist or hardmask on the first side of the substrate above the seed layer, such that the resist or hardmask comprises openings aligned with the etched openings in the substrate. The etched openings in the substrate are filled with a superconducting filler material. The substrate is thinned by removing material from the second side of the substrate until the deposited seed layer is exposed on the second side of the substrate.

A semiconductor may include a first inter metal dielectric (IMD) layer, a first blocking layer on the first IMD layer, a metal wiring and a second blocking layer. The first inter metal dielectric (IMD) layer may be formed on a substrate, the first IMD layer may include a low-k material having a dielectric constant lower than a dielectric constant of silicon oxide. The first blocking layer may be formed on the first IMD layer. The first blocking layer may include an oxide having a dielectric constant higher than the dielectric constant of the first IMD layer. The metal wiring may be through the first IMD layer and the first blocking layer. The second blocking layer may be formed on the metal wiring and the first blocking layer. The second blocking layer may include a nitride. The first and second blocking layers may reduce or prevent from the out gassing, so that a semiconductor device may have good characteristics.

The present disclosure discloses a method for manufacturing an electronic device, including: setting a basic working area; a photoresist coating process; a development process; an etching process; an exposure process; a metal plating process; and a polishing process, wherein the photoresist coating process, the development process, the etching process, the exposure process, the metal plating process and the polishing process respectively have a maximum optimized process area, and a smallest one of the maximum optimized process areas is selected as the basic working area.

A system for printing metal interconnects on a substrate includes an anode substrate. A plurality of anodes are arranged on one side of the anode substrate with a first predetermined gap between adjacent ones of the plurality of anodes. A first plurality of fluid holes have one end located between the plurality of anodes. A plurality of control devices is configured to selectively supply current to the plurality of anodes, respectively. The anode substrate is arranged within a second predetermined gap of a work piece substrate including a metal seed layer. A ratio of the second predetermined gap to the first predetermined gap is in a range from 0.5:1 and 1.5:1. An array controller is configured to energize selected ones of the plurality of anodes using corresponding ones of the plurality of control devices while electrolyte solution is supplied through the first plurality of fluid holes between the anode substrate and the work piece substrate.

Semiconductor dies including ultra-thin wafer backmetal systems, microelectronic devices containing such semiconductor dies, and associated fabrication methods are disclosed. In one embodiment, a method for processing a device wafer includes obtaining a device wafer having a wafer frontside and a wafer backside opposite the wafer frontside. A wafer-level gold-based ohmic bond layer, which has a first average grain size and which is predominately composed of gold, by weight, is sputter deposited onto the wafer backside. An electroplating process is utilized to deposit a wafer-level silicon ingress-resistant plated layer over the wafer-level Au-based ohmic bond layer, while imparting the plated layer with a second average grain size exceeding the first average grain size. The device wafer is singulated to separate the device wafer into a plurality of semiconductor die each having a die frontside, an Au-based ohmic bond layer, and a silicon ingress-resistant plated layer.

In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.

Exemplary electroplating systems may include a vessel. The systems may include a paddle disposed within the vessel. The paddle may be characterized by a first surface and a second surface. The first surface of the paddle may be include a plurality of ribs that extend upward from the first surface. The plurality of ribs may be arranged in a generally parallel manner about the first surface. The paddle may define a plurality of apertures through a thickness of the paddle. Each of the plurality of apertures may have a diameter of less than about 5 mm. The paddle may have an open area of less than about 15%.

A method of depositing a metal material on an isolated seed layer uses a barrier layer as a conductive path for plating. The method may include depositing a barrier layer on a substrate wherein the barrier layer provides adhesion for seed layer material and inhibits migration of the seed layer material, forming at least one isolated seed layer area on the barrier layer on the substrate, and depositing the metal material on the at least one isolated seed layer area using an electrochemical deposition process wherein the barrier layer provides a current path to deposit the metal material on the at least one isolated seed layer area.

Some of the embodiments of the present application provide a semiconductor structure and a method of manufacturing the same, the method of manufacturing the semiconductor structure comprising: providing a base; performing a first electroplating process to form a first electroplated layer on the base; performing a second electroplating process to form a second electroplated layer on the surface of the first electroplated layer, the current density of the second electroplated layer being greater than the current density of the first electroplated layer.