A method for forming a semiconductor device structure is provided. The method includes forming a first negative capacitance material over a substrate and patterning the first negative capacitance material to form a fin structure over the substrate. The method also includes forming a source feature and a drain feature in and protruding from a source region and a drain region of the fin structure. The method also includes forming a gate dielectric structure between the source feature and the drain feature to cover a channel region of the fin structure and forming a gate electrode layer over the gate dielectric structure.

A method of passivating a MOTFT including providing a metal oxide thin film transistor having a surface defined by spaced apart source/drain terminals positioned on a layer of semiconductor metal oxide and material in a space between the source/drain terminals, the space between the source/drain terminals defining a conduction channel in the layer of semiconductor metal oxide. Forming a layer of passivation material on the surface defined by the spaced apart source/drain terminals and the material in the space between the source/drain terminals. Establishing oxygen vacancy equilibrium in the conduction channel of the layer of semiconductor metal oxide by annealing in an oxygen containing ambient the MOTFT and layer of passivation material and depositing a layer including a noble metal, a refractory metal, and/or a transparent conducting metal oxide on the layer of passivation material overlying the space between the source/drain terminals.

A method of passivating a MOTFT including providing a metal oxide thin film transistor having a surface defined by spaced apart source/drain terminals positioned on a layer of semiconductor metal oxide and material in a space between the source/drain terminals, the space between the source/drain terminals defining a conduction channel in the layer of semiconductor metal oxide. Forming a layer of passivation material on the surface defined by the spaced apart source/drain terminals and the material in the space between the source/drain terminals. Establishing oxygen vacancy equilibrium in the conduction channel of the layer of semiconductor metal oxide by annealing in an oxygen containing ambient the MOTFT and layer of passivation material and depositing a layer including a noble metal, a refractory metal, and/or a transparent conducting metal oxide on the layer of passivation material overlying the space between the source/drain terminals.

Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl.sub.2 and BCl.sub.3.

According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.

According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.

Provided is a thin film transistor (TFT) that includes a first electrode on a substrate separated from a second electrode, an oxide semiconductor pattern on the second electrode including a channel region, a third electrode on the oxide semiconductor pattern, a first insulating layer on the substrate including the third electrode including first contact holes exposing a part of the first electrode, a part of the second electrode, and a part of the third electrode, a gate electrode on the first insulating layer and corresponding to a part of the oxide semiconductor pattern, a second insulating layer on the substrate including the gate electrode including a second contact hole corresponding to the first contact hole that exposes a part of the second electrode, and a pixel electrode on the second insulating layer electrically connected to the second electrode through the first contact hole and the second contact hole.

Provided is a thin film transistor (TFT) that includes a first electrode on a substrate separated from a second electrode, an oxide semiconductor pattern on the second electrode including a channel region, a third electrode on the oxide semiconductor pattern, a first insulating layer on the substrate including the third electrode including first contact holes exposing a part of the first electrode, a part of the second electrode, and a part of the third electrode, a gate electrode on the first insulating layer and corresponding to a part of the oxide semiconductor pattern, a second insulating layer on the substrate including the gate electrode including a second contact hole corresponding to the first contact hole that exposes a part of the second electrode, and a pixel electrode on the second insulating layer electrically connected to the second electrode through the first contact hole and the second contact hole.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a fin structure that includes a first negative capacitance material, and an isolation structure formed over the substrate. The semiconductor device structure includes a gate structure formed over the fin structure, and a source feature and a drain feature formed over the fin structure. An interface between the fin structure and the source feature is lower than a top surface of the isolation structure.

A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.