A photoresist developer includes a solvent having Hansen solubility parameters of 15<δ.sub.d<25, 10<δ.sub.p<25, and 6<δ.sub.p<30; an acid having an acid dissociation constant, pKa, of −15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.

A photosensitive resin composition comprising an isocyanurate-modified silicone resin containing an epoxy group in the molecule is easy to form a resin coating which has high transparency, light resistance and heat resistance, is amenable to micro-processing, and is useful in applications for protecting and encapsulating optical devices. The coating can be processed in thick film form to define a pattern having a fine size and perpendicularity, and becomes a cured coating which has improved adhesion to substrates, electronic parts, semiconductor devices, and supports for circuit boards, mechanical properties, electric insulation, and crack resistance, and is reliable as an insulating protective film.

A photoresist developer includes a solvent having Hansen solubility parameters of 15<δ.sub.d<25, 10<δ.sub.p<25, and 6<δ.sub.p<30; an acid having an acid dissociation constant, pKa, of −15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.

A photoresist developer includes a solvent having Hansen solubility parameters of 15<δ.sub.d<25, 10<δ.sub.p<25, and 6<δ.sub.p<30; an acid having an acid dissociation constant, pKa, of −15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.

A method of forming a semiconductor device includes forming a semiconductor strip extending above a semiconductor substrate, forming shallow trench isolation (STI) regions on opposite sides of the semiconductor strip, recessing a portion of the semiconductor strip, etching the STI regions to form a recess in the STI regions, forming a first thermal conductive layer in the recess, forming a source/drain epitaxy structure on the first thermal conductive layer, and forming a gate stack across the semiconductor strip and extending over the STI regions.

A method of forming a semiconductor device includes forming a semiconductor strip extending above a semiconductor substrate, forming shallow trench isolation (STI) regions on opposite sides of the semiconductor strip, recessing a portion of the semiconductor strip, etching the STI regions to form a recess in the STI regions, forming a first thermal conductive layer in the recess, forming a source/drain epitaxy structure on the first thermal conductive layer, and forming a gate stack across the semiconductor strip and extending over the STI regions.

This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition:

Chemical Formula 1

##STR00001##

wherein, in Chemical Formula 1, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from —OR.sup.a and —OC(═O)R.sup.b.

This disclosure relates to a semiconductor resist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and to a method of forming patterns using the composition:

Chemical Formula 1

##STR00001##

wherein, in Chemical Formula 1, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an -alkylene-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from —OR.sup.a and —OC(═O)R.sup.b.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: ##STR00001## wherein, in Chemical Formula I, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an —alkylene-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from —OR.sup.a and —OC(═O)R.sup.b, where R.sup.a is not hydrogen.

A semiconductor resist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent: ##STR00001## wherein, in Chemical Formula I, R.sup.1 is an aliphatic hydrocarbon group, an aromatic hydrocarbon group, or an —alkylene-O-alkyl group, and R.sup.2 to R.sup.4 are each independently selected from —OR.sup.a and —OC(═O)R.sup.b, where R.sup.a is not hydrogen.