The present invention provides a thin-film transistor substrate including a base substrate and a thin-film transistor, the thin-film transistor including: a gate electrode; a gate insulating layer; a source electrode and a drain electrode; and an oxide semiconductor layer in this order. The source electrode and the drain electrode each include a first conductive layer and a second conductive layer covering the first conductive layer. The second conductive layer contains at least one element selected from the group consisting of molybdenum, tantalum, tungsten, and nickel. The gate insulating layer in a region between the source electrode and the drain electrode has a smaller thickness than in a region below the source electrode and in a region below the drain electrode.

The present invention provides a thin-film transistor substrate including a base substrate and a thin-film transistor, the thin-film transistor including: a gate electrode; a gate insulating layer; a source electrode and a drain electrode; and an oxide semiconductor layer in this order. The source electrode and the drain electrode each include a first conductive layer and a second conductive layer covering the first conductive layer. The second conductive layer contains at least one element selected from the group consisting of molybdenum, tantalum, tungsten, and nickel. The gate insulating layer in a region between the source electrode and the drain electrode has a smaller thickness than in a region below the source electrode and in a region below the drain electrode.

Embodiments of the invention provide a method for in-situ selective deposition and etching for advanced patterning applications. According to one embodiment the method includes providing in a process chamber a substrate having a metal-containing layer thereon, and exposing the substrate to a gas pulse sequence to etch the metal-containing layer in the absence of a plasma, where the gas pulse sequence includes, in any order, exposing the substrate to a first reactant gas containing a halogen-containing gas, and exposing the substrate to a second reactant gas containing an aluminum alkyl. According to another embodiment, the substrate has an exposed first material layer and an exposed second material layer, and the exposing to the gas pulse sequence selectively deposits an additional material layer on the exposed first material layer but not on the exposed second material layer.

Embodiments of the invention provide a method for in-situ selective deposition and etching for advanced patterning applications. According to one embodiment the method includes providing in a process chamber a substrate having a metal-containing layer thereon, and exposing the substrate to a gas pulse sequence to etch the metal-containing layer in the absence of a plasma, where the gas pulse sequence includes, in any order, exposing the substrate to a first reactant gas containing a halogen-containing gas, and exposing the substrate to a second reactant gas containing an aluminum alkyl. According to another embodiment, the substrate has an exposed first material layer and an exposed second material layer, and the exposing to the gas pulse sequence selectively deposits an additional material layer on the exposed first material layer but not on the exposed second material layer.

An organic light emitting diode (OLED) display including: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the substrate and covering the organic light emitting diode; a second inorganic layer formed on the first inorganic layer and contacting the first inorganic layer at an edge of the second inorganic layer, an organic layer formed on the second inorganic layer and covering a relatively smaller area than the second inorganic layer; and a third inorganic layer formed on the organic layer, covering a relatively larger area than the organic layer, and contacting the first inorganic layer and the second inorganic layer at an edge of the third inorganic layer.

An organic light emitting diode (OLED) display including: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the substrate and covering the organic light emitting diode; a second inorganic layer formed on the first inorganic layer and contacting the first inorganic layer at an edge of the second inorganic layer; an organic layer formed on the second inorganic layer and covering a relatively smaller area than the second inorganic layer; and a third inorganic layer formed on the organic layer, covering a relatively larger area than the organic layer, and contacting the first inorganic layer and the second inorganic layer at an edge of the third inorganic layer.

An organic light emitting diode (OLED) display including: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the substrate and covering the organic light emitting diode; a second inorganic layer formed on the first inorganic layer and contacting the first inorganic layer at an edge of the second inorganic layer; an organic layer formed on the second inorganic layer and covering a relatively smaller area than the second inorganic layer; and a third inorganic layer formed on the organic layer, covering a relatively larger area than the organic layer, and contacting the first inorganic layer and the second inorganic layer at an edge of the third inorganic layer.

Embodiments of the invention provide a method for in-situ selective deposition and etching for advanced patterning applications. According to one embodiment the method includes providing in a process chamber a substrate having a metal-containing layer thereon, and exposing the substrate to a gas pulse sequence to etch the metal-containing layer in the absence of a plasma, where the gas pulse sequence includes, in any order, exposing the substrate to a first reactant gas containing a halogen-containing gas, and exposing the substrate to a second reactant gas containing an aluminum alkyl. According to another embodiment, the substrate has an exposed first material layer and an exposed second material layer, and the exposing to the gas pulse sequence selectively deposits an additional material layer on the exposed first material layer but not on the exposed second material layer.

The present invention provides a laterally diffused metal-oxide-semiconductor (LDMOS) transistor and a manufacturing method thereof. The LDMOS transistor includes a semiconductor substrate, an insulation structure, agate structure, and a plurality of floating electrodes. The insulation structure is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate. The floating electrodes are embedded in the insulation structure, wherein the floating electrode closest to the gate structure protrudes from a top surface of the insulation structure or the gate structure includes at least one branch portion embedded in the insulation structure, and the floating electrodes are separated from the gate structure.

The present invention provides a laterally diffused metal-oxide-semiconductor (LDMOS) transistor and a manufacturing method thereof. The LDMOS transistor includes a semiconductor substrate, an insulation structure, agate structure, and a plurality of floating electrodes. The insulation structure is disposed in the semiconductor substrate. The gate structure is disposed on the semiconductor substrate. The floating electrodes are embedded in the insulation structure, wherein the floating electrode closest to the gate structure protrudes from a top surface of the insulation structure or the gate structure includes at least one branch portion embedded in the insulation structure, and the floating electrodes are separated from the gate structure.