An electronic skin is manufactured by disposing an oxide thin film transistor (TFT), a pressure sensor, and a temperature sensor on a flexible substrate. The pressure sensor and the temperature sensor are respectively located on two sides of the flexible substrate. The oxide TFT includes a first TFT and a second TFT. The pressure sensor is configured to drive the first TFT, and the temperature sensor is configured to drive the second TFT. The method for preparing the electronic skin is to form an oxide TFT, a pressure sensor, and a temperature sensor by means of etching and deposition on a flexible substrate whose double sides are covered with conductive materials. The electronic skin provided in the present invention may simultaneously measure pressure and temperatures, and has a simple structure, a low working voltage, small power consumption, high sensitivity, and small interference between sensor signals.

A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.

The present disclosure discloses a method for preparing an isolation area of a gallium oxide device, the method comprising: depositing a mask layer on a gallium oxide material; removing a preset portion region of the mask layer; preparing an isolation area in a position, corresponding to the preset portion region, on the gallium oxide material by using a high-temperature oxidation technique, with the isolation area being located between active areas of the gallium oxide device; and removing the remaining mask layer on the gallium oxide material. In the disclosure, the isolation area is prepared by using the high-temperature oxidation technique, which prevents damage to the gallium oxide device during the preparation of the isolation area, thereby achieving isolation between the active areas of the gallium oxide device.

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

A display device includes: a substrate including first and second light-blocking areas, and a pixel area; a light-blocking pattern at least partially at the first light-blocking area; a data line at the second light-blocking area; a first insulating layer on the light-blocking pattern and the data line; a semiconductor layer on the first insulating layer and overlapping the light-blocking pattern on a plane; a second insulating layer on the semiconductor layer; a color filter on the second insulating layer at least partially at the pixel area; a third insulating layer on the second insulating layer and the color filter; a gate line on the third insulating layer at the first light-blocking area; a pixel electrode at least partially at the pixel area; and a bridge electrode at least partially at the first light-blocking area. The second and third insulating layers directly contact one another over the semiconductor layer.

A method of manufacturing a semiconductor device. A pre first semiconductor pattern having a crystalline semiconductor material is formed on a base substrate. A pre first insulation layer is formed on the pre first semiconductor pattern. A first semiconductor pattern is formed by defining a channel region in the pre first semiconductor pattern. A pre protection layer is formed on the pre first insulation layer. A pre second semiconductor pattern including an oxide semiconductor material is formed on the pre protection layer. A pre second insulation layer is formed on the pre second semiconductor pattern. The pre second insulation layer is patterned using an etching gas such that at least a portion of the pre second semiconductor pattern is exposed. A second semiconductor pattern is formed by defining a channel region in the pre second semiconductor pattern. The pre protection layer has a material with a first etch selectivity that is different from a second etch selectivity of the second insulation layer with respect to the etching gas.

A semiconductor arrangement and method of formation are provided. The semiconductor arrangement comprises a conductive contact in contact with a substantially planar first top surface of a first active area, the contact between and in contact with a first alignment spacer and a second alignment spacer both having substantially vertical outer surfaces. The contact formed between the first alignment spacer and the second alignment spacer has a more desired contact shape then a contact formed between alignment spacers that do not have substantially vertical outer surfaces. The substantially planar surface of the first active area is indicative of a substantially undamaged structure of the first active area as compared to an active area that is not substantially planar. The substantially undamaged first active area has a greater contact area for the contact and a lower contact resistance as compared to a damaged first active area.

Various embodiments provide a thin film transistor (TFT) device, a manufacturing method of the TFT device, and a display apparatus including the TFT device. An etch stop layer (ESL) material is formed on an active layer on a substrate. An electrical conductive layer material is formed on the ESL material for forming a source electrode and a drain electrode. The electrical conductive layer material is patterned to form a first portion of the source electrode containing a first via-hole through the source electrode, and to form a first portion of the drain electrode containing a second via-hole through the drain electrode. The ESL material is patterned to form an etch stop layer (ESL) pattern including a first ESL via-hole connecting to the first via-hole through the source electrode and including a second ESL via-hole connecting to the second via-hole through the drain electrode.

A first insulating film in contact with an oxide semiconductor film and a second insulating film are stacked in this order over an electrode film of a transistor including the oxide semiconductor film, an etching mask is formed over the second insulating film, an opening portion exposing the electrode film is formed by etching a portion of the first insulating film and a portion of the second insulating film, the opening portion exposing the electrode film is exposed to argon plasma, the etching mask is removed, and a conductive film is formed in the opening portion exposing the electrode film. The first insulating film is an insulating film whose oxygen is partly released by heating. The second insulating film is less easily etched than the first insulating film and has a lower gas-permeability than the first insulating film.