Methods and materials for growing TMD materials on substrates and making semiconductor devices are described. Metal contacts may be created prior to conducting a deposition process such as chemical vapor deposition (CVD) to grow a TMD material, such that the metal contacts serve as the seed/catalyst for TMD material growth. A method of making a semiconductor device may include conducting a lift-off lithography process on a substrate to produce a substrate having metal contacts deposited thereon in lithographically defined areas, and then growing a TMD material on the substrate by a deposition process to make a semiconductor device. Further described are semiconductor devices having a substrate with metal contacts deposited thereon in lithographically defined areas, and a TMD material on the substrate, where the TMD material is a continuous, substantially uniform monolayer film between and on the metal contacts, where the metal contacts are chemically bonded to the TMD material.

A display device that is suitable for increasing in size is achieved. Three or more source lines are provided for each pixel column. Video signals having the same polarity are input to adjacent source lines during one frame period. Dot inversion driving is used to reduce a flicker, crosstalk, or the like.

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

The present invention provides an etchant less causing damage to IGZOs. The etchant of the present invention comprises hydroxyethanediphosphonic acid (A), one or more phosphonic acids (B), hydrogen peroxide (C), nitric acid (D), a fluorine compound (E), an azole (F), and an alkali (G), and is characterized in that the phosphoric acids (B) comprise one or more phosphonic acids selected from the group consisting of diethylenetriaminepentamethylenephosphonic acid, N,N,N′,N′-ethylenediaminetetrakismethylenephosphonic acid, and aminotrimethylenephosphonic acid and that the proportion of the hydroxyethanediphosphonic acid (A) is in the range of 0.01-0.1 mass % and the proportion of the phosphonic acids (B) is in the range of 0.003-0.04 mass %.

A thin film transistor, a manufacturing method thereof, an array substrate, and a display panel are provided. The thin film transistor includes a semiconductor layer, a source and a drain. The semiconductor layer includes an active layer and a superhydrophobic layer. The active layer includes a source contact, a drain contact and a channel portion. The source corresponds to the source contact, and the drain corresponds to the drain contact. The superhydrophobic layer is disposed on a surface of the active layer proximal to the source and the drain. The superhydrophobic layer includes a plurality of multi-level nanostructures protruding from the surface of the active layer, and the superhydrophobic layer at least covers a channel portion of the active layer.

A manufacturing method of a display substrate, a display substrate, and a display device. The manufacturing method includes: forming an active layer; forming a gate insulation film layer, a gate film layer and a photoresist film layer; exposing the photoresist film layer to a light and developing the exposed photoresist film layer until the developed photoresist film layer has a thickness of 1.8-2.2 μm and a slope angle not less than 70°; over-etching the gate film layer to form a gate electrode, an orthographic projection of the gate electrode being located within a region of an orthographic projection of the developed photoresist film layer; over-etching the gate insulation film layer by a gaseous corrosion method to form a gate insulation layer; peeling off the photoresist film layer remaining on a surface of the gate electrode; and performing a conductive treatment to the active layer.

A display device that is suitable for increasing in size is achieved. Three or more source lines are provided for each pixel column. Video signals having the same polarity are input to adjacent source lines during one frame period. Dot inversion driving is used to reduce a flicker, crosstalk, or the like.

A semiconductor device includes thin film transistors each having an oxide semiconductor. The oxide semiconductor has a channel region, a drain region, a source region, and low concentration regions which are lower in impurity concentration than the drain region and the source region. The low concentration regions are located between the channel region and the drain region, and between the channel region and the source region. Each of the thin film transistors has a gate insulating film on the channel region and the low concentration regions, an aluminum oxide film on a first part of the gate insulating film, the first part being located on the channel region, and a gate electrode on the aluminum oxide film and a second part of the gate insulating film, the second part being located on the low concentration regions.

The present disclosure relates to a thin film transistor and a manufacturing method thereof, a flexible display screen and a display device. The thin film transistor is disposed on a substrate. The thin film transistor includes: an active layer, a source-drain conductive layer, and a gate conductive layer. The gate conductive layer includes a gate electrode, and the gate conductive layer is disposed on one side of the active layer away from the substrate and insulated from the active layer. The source-drain conductive layer includes a first electrode and a second electrode. The orthogonal projections of the first electrode, the gate electrode, and the second electrode on the substrate are sequentially nested from inside to outside and separately disposed. The reliability of image display may be improved.