A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.

The present disclosure relates to a method of manufacturing a semiconductor device package. The method includes: (a) disposing a support structure on a first substrate; (b) electrically connecting a first electronic component on the first substrate, wherein a portion of the first electronic component is separated from the first substrate by the support structure; (c) heating the semiconductor device package; and (d) removing the support structure.

A semiconductor package includes an IC having circuitry configured for at least one function with some nodes connected to bond pads, with first metal posts on the bond pads, and dome support metal posts configured in a ring having a top rim defining an inner cavity with solder on the top rim and extending over an area of the inner cavity for providing a solder dome that covers the inner cavity to provide a covered air cavity over a portion of the circuitry. A leadframe includes a plurality of leads or lead terminals. The IC is flipchip attached with a solder connection to the leadframe so that the first metal posts are attached to the leads or the lead terminals. A mold compound provides encapsulation for the semiconductor package except on at least a bottom side of the leads or lead terminals.

The present disclosure relates to a method of manufacturing a semiconductor device package. The method includes: (a) disposing a support structure on a first substrate; (b) electrically connecting a first electronic component on the first substrate, wherein a portion of the first electronic component is separated from the first substrate by the support structure; (c) heating the semiconductor device package; and (d) removing the support structure.

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.

A semiconductor package includes a leadframe forming a plurality of leads with a die attach site, a semiconductor die including a set of die contacts mounted to the die attach site in a flip chip configuration with each die contact of the set of die contacts electrically connected to leadframe via one of a set of solder joints, a set of solder joint capsules covering each of the set of solder joints against the leadframe, a clip mounted to the leadframe over the semiconductor die with a clip solder joint. The solder joint capsules restrict flow of the solder joints of the semiconductor die contacts in the flip chip configuration such that the solder remains in place if remelted during later clip solder reflow.

A method for forming a semiconductor package is disclosed. The method includes providing a package substrate having a die attach region with a die attached thereto. A protective cover is disposed over a sensor region of the die and attached to the die by a cover adhesive. The protective cover is supported by a standoff structure disposed on the die and below the protective cover. An encapsulant is disposed to cover the package substrate while leaving the top package surface exposed.

A method of assembling a semiconductor power module component 30 and a manufacturing system comprising such a semiconductor power module component and a pressing apparatus 20 for manufacturing a semiconductor power module component are described. The semiconductor power module component 30 comprises at least a first element 1, a second element 2 and a third element 3 arranged in a stack 10. The first element 1 and the second element 2 are joined by sintering in a sintering area 4 and the second element 2 and the third element 3 are joined by soldering in a soldering area 6. The sintering and the soldering are simultaneously executed, wherein the soldering area 6 is heated to a temperature of soldering and the sintering area 4 is heated to a temperature of sintering, the temperature of soldering and the temperature of sintering being harmonized to each other. Pressure is being applied to the stack 10, comprising the at least one soldering area 6 and the at least one sintering area 4 with stabilizing means 7 being arranged in the soldering area 6.

A semiconductor die is bonded using epoxy onto a substrate supported on a heating platform. After preheating the substrate with the heating platform to a temperature of between 25 C. and 60 C., an epoxy dispenser deposits an epoxy dot onto the substrate before the semiconductor die is placed onto the epoxy dot with a pick head to thereby bond the semiconductor die onto the substrate.