Vias and methods of making the same. The vias including a middle portion located in a via opening in an interconnect-level dielectric layer, a top portion including a top head that extends above the via opening and extends laterally beyond upper edges of the via opening and a bottom portion including a bottom head that extends below the via opening and extends laterally beyond lower edges of the via opening. The via may be formed from a refractory material.

A multilayer conductive line is disclosed. The multilayer conductive line includes a dielectric layer, a Ta barrier layer on the dielectric layer and a superlattice on the Ta barrier layer. The superlattice includes a plurality of interleaved ferromagnetic and non-ferromagnetic material.

A method of forming a semiconductor structure includes forming a semiconductor device over a substrate, forming a combination of a connection-level dielectric layer and a connection-level metal interconnect structure over the semiconductor device, where the connection-level metal interconnect structure is electrically connected to a node of the semiconductor device and is embedded in the connection-level dielectric layer, forming a line-and-via-level dielectric layer over the connection-level dielectric layer, forming an integrated line-and-via cavity through the line-and-via-level dielectric layer over the connection-level metal interconnect structure, selectively growing a conductive via structure containing cobalt from a bottom of the via portion of the integrated line-and-via cavity without completely filling a line portion of the integrated line-and-via cavity, and forming a copper-based conductive line structure that contains copper at an atomic percentage that is greater than 90% in the line portion of the integrated line-and-via cavity on the conductive via structure.

A semiconductor structure includes a first dielectric material layer, a first metal interconnect structure embedded within the first dielectric material layer and including a first metallic material portion including a first metal, a second dielectric material layer located over the first dielectric material layer, and a second metal interconnect structure embedded within the second dielectric material layer and including an integrated line-and-via structure that includes a second metallic material portion including a second metal. A metal-semiconductor alloy portion including a first metal-semiconductor alloy of the first metal and a semiconductor material is located underneath the second metallic material portion, and contacts a top surface of the first metal interconnect structure.

Interconnect structures and methods of forming interconnect structures are disclosed that provide decreased risk of unwanted via formation through interconnect-level dielectric layers. A method of forming an interconnect structure includes forming first and second dielectric layers over a first metal interconnect feature, where the dielectric layers include localized elevated regions caused by a hillock in the first metal interconnect feature. A planarization process removes the localized elevated region of the second dielectric layer, and third and fourth dielectric layers are formed over the planar upper surface of the second dielectric layer. An etching process through the third and fourth dielectric layers, and into the second dielectric layer, provides a trench having a planar bottom surface. A second metal interconnect feature is formed within the trench, where the second metal interconnect feature includes a planar bottom surface overlying the localized elevated region of the first dielectric layer and the hillock.

A semiconductor structure includes a substrate, a dielectric layer, and a graphene conductive structure. The dielectric layer is disposed on the substrate, and has an inner lateral surface that is perpendicular to the substrate. The graphene conductive structure is formed in the dielectric layer and has at least one graphene layer extending in a direction parallel to the inner lateral surface of the dielectric layer.

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate. Each electrically conductive layer within a subset of the electrically conductive layers includes a respective first metal layer containing an elemental metal and a respective first metal silicide layer containing a metal silicide of the elemental metal. Memory openings vertically extend through the alternating stack. Memory opening fill structures located within the memory openings can include a respective memory film and a respective vertical semiconductor channel.

A method including forming a dual damascene interconnect structure comprising a metal wire above a via, recessing the metal wire to form a trench, depositing a liner along a bottom and a sidewall of the trench, and forming a new metal wire in the trench. The method may also include forming a dual damascene interconnect structure comprising a metal wire above a via, recessing the metal wire to form a trench, depositing a liner along a bottom and a sidewall of the trench, removing the liner along the bottom of the trench, and forming a new metal wire in the trench.

An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a conductive plug over a substrate; a conductive feature over the conductive plug, wherein the conductive feature has a first sidewall, a second sidewall facing the first sidewall, and a bottom surface; and a carbon-containing barrier layer having a first portion along the first sidewall of the conductive feature, a second portion along the second sidewall of the conductive feature, and a third portion along the bottom surface of the conductive feature.

A barrier layer is selectively formed on a bottom surface of a recess (e.g., in which a back end of line (BEOL) conductive structure will be formed) using a combination of flash physical vapor deposition with atomic layer deposition. Additionally, a ruthenium liner is selectively deposited on sidewalls of the BEOL conductive structure using a blocking material. Accordingly, the barrier layer prevents diffusion of metal ions from the BEOL conductive structure and is thinner at the bottom surface as compared to the sidewalls in order to reduce contact resistance. Additionally, the ruthenium liner improves copper flow into the BEOL conductive structure and is thinner at the bottom surface in order to further reduce contact resistance.