A method of processing a wafer having a plurality of devices provided in respective areas demarcated on a face side of the wafer by a plurality of projected dicing lines. The method includes coating the face side with a protective film agent and thereafter drying the protective film agent into a protective film covering the face side, applying a laser beam having a wavelength absorbable by the wafer to the wafer along the projected dicing lines on the face side, thereby producing a plurality of laser-processed slots in the wafer, cleaning away the protective film, applying ultraviolet rays to the face side to remove an organic substance deriving from the protective film and remaining on the face side, and covering coverage areas corresponding to the respective devices on the face side with an encapsulating resin.

A method for manufacturing a backside metalized compound semiconductor wafer includes the steps of: providing a compound semiconductor wafer; attaching the compound semiconductor wafer to a supporting structure; forming an adhesion layer including nickel and vanadium on a back surface of the compound semiconductor wafer; forming an alloy layer including titanium and tungsten on the adhesion layer; forming a metallization layer including gold on the alloy layer; and removing the supporting structure from the compound semiconductor wafer to obtain the backside metalized compound semiconductor wafer.

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

A semiconductor device structure is provided. The semiconductor device structure includes a dielectric structure over the substrate. The semiconductor device structure includes a contact structure passing through the dielectric structure. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer. The first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of the first barrier layer, the contact layer passes through the first barrier layer and extends into the dielectric structure, and the first barrier layer passes through the second barrier layer and extends into the dielectric structure.

A display panel and a method of restoring vertical dark lines of a display panel are provided. The display panel has at least one fan-out trace with a double-decked conducting wire structure. The fan-out trace includes a first conducting wire and a second conducting wire stack-up. An insulating layer is disposed between the first and second conducting wires to insulate and space the first and second conducting wires. For the method of restoring vertical dark lines of the display panel, forming at least four welds at an equal interval on the fan-out trace to electrically connect the first and second conducting wires.

A method of manufacturing a semiconductor device comprises providing a substrate; forming an insulating layer on the substrate; etching the insulating layer to form an opening that exposes the substrate; forming a contact plug in the opening and on the insulating layer; forming a metal layer on the contact plug; and irradiating the metal layer with a laser.

A display panel and a defect repairing method of same are provided by this application. The display panel comprises a display area and a bezel area. The display area comprises a plurality of scan lines and a plurality of data lines. Each of a plurality of pixel electrodes is disposed in a pixel area surrounded by the scan lines and the data lines, including two trunk electrodes disposed in a shape of a cross. a common electrode disposed in a different layer from the pixel electrodes. The common electrode comprises a plurality of first electrode lines and a plurality of second electrode lines. a portion of the common electrode corresponding to one of the trunk electrodes is overlapped with the one of the trunk electrodes.

A semiconductor device structure is provided. The semiconductor device structure includes a dielectric structure over the substrate. The semiconductor device structure includes a contact structure passing through the dielectric structure. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer, the contact layer passes through the first barrier layer, the first barrier layer passes through the second barrier layer, the first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of a sidewall of the first barrier layer and exposes a first lower portion of the sidewall of the first barrier layer, and the sidewall faces away from the contact layer.

A wafer processing method includes: cutting a device layer stacked on a semiconductor substrate along division lines to form cut grooves; positioning a focal point of a laser beam having a transmission wavelength to the semiconductor substrate inside an area of the semiconductor substrate corresponding to a predetermined one of the division lines and applying the laser beam to the wafer from a back surface of the wafer, thereby forming a plurality of modified layers inside the wafer along all of the division lines; and grinding the back surface of the wafer to be thinned, causing a crack to grow from each of the modified layers formed inside the area of the semiconductor substrate corresponding to the predetermined one of the division lines to the front surface side of the wafer, thereby dividing the wafer into individual device chips.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of heating the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.