A power die package includes a lead frame having a flag with power leads on one lateral side and signal leads on one or more other lateral sides. A power die is attached to a bottom surface of the flag and electrically connected to the power leads with a conductive epoxy. A control die is attached to a top surface of the flag and electrically connected to the signal leads with bond wires. A mold compound is provided that encapsulates the dies, the bond wires, and proximal parts of the leads, while distal ends of the leads are exposed, forming a PQFN package.

After a distal end portion of a first lead of a first lead frame is connected to a first signal pad, and a distal end portion of a second lead is connected to a second signal pad, the interval between the linear portion of the first lead and the linear portion of the second lead is adjusted using a lead shape changing jig.

In one example, a semiconductor device includes a substrate having leads that include lead terminals, lead steps, and lead offsets extending between the lead steps so that at least some lead steps reside on different planes. A first electronic component is coupled to a first lead step side and includes a first electronic component first side, and a first electronic component second side opposite to the first electronic component first side. A second electronic component is coupled to a second lead step side, and includes a second electronic component first side, and a second electronic component second side opposite to the second electronic component first side. An encapsulant encapsulates the first electronic component, the second electronic component, and portions of the substrate. The lead terminals are exposed from a first side of the encapsulant. Other examples and related methods are also disclosed herein.

In a described example, an apparatus includes: a package substrate having a die mount surface; semiconductor die flip chip mounted to the package substrate on the die mount surface, the semiconductor die having post connects having proximate ends on bond pads on an active surface of the semiconductor die, and extending to distal ends away from the active surface of the semiconductor die and connected to the package substrate by solder joints; a thermal interposer comprising a thermally conductive material positioned over and in thermal contact with a backside surface of the semiconductor die; and mold compound covering a portion of the package substrate, a portion of the thermal interposer, the semiconductor die, and the post connects, the thermal interposer having a surface exposed from the mold compound.

An electronic device includes a semiconductor die, an enclosure, leads extending outwardly from the enclosure and electrically connected to the semiconductor die, and wherein the leads have a reduced cross-sectional area along a longitudinal length of the lead. The electronic device is designed to reduce the occurrence of crack formation between the leads and a printed circuit board.

A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the leadframe, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

A pre-molded substrate for semiconductor devices includes a sculptured electrically conductive (e.g., copper) laminar structure having spaces therein. The laminar structure includes one or more die pads having a first die pad surface configured to have semiconductor chips mounted thereon. A pre-mold material molded onto the laminar structure penetrates into the spaces therein and provides a laminar pre-molded substrate including the first die pad surface left exposed by the pre-mold material with the die pad(s) bordering on the pre-mold material. One or more stress-relief curved portions are provided at the periphery of one or more of the die pads. The stress-relief curved portions are configured to border on the pre-mold material over a smooth surface to effectively counter the formation of cracks in the pre-mold material as a result of the pre-molded substrate being bent.

An object is to provide a technique capable of enhancing electrical characteristics and reliability of a semiconductor device. The semiconductor device includes a plurality of semiconductor chips, a plurality of electrodes each being electrically connected to each of the plurality of semiconductor chips, a sealing member, and a joint part. The sealing member covers the plurality of semiconductor chips, and parts being connected to the plurality of semiconductor chips, of the plurality of electrodes. The joint part is disposed outside the sealing member to electrically connect parts which are not covered by the sealing member, of the plurality of electrodes.

According to an aspect, a semiconductor package includes a substrate having a first surface and a second surface opposite to the first surface, a semiconductor die coupled to the second surface of the substrate, and a molding encapsulating the semiconductor die and a majority of the substrate, where at least a portion of the first surface is exposed through the molding such that the substrate is configured to function as a heat sink.

In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.