An example of a method of making a printed structure comprises providing a destination substrate, contact pads disposed on the destination substrate, and a layer of adhesive disposed on the destination substrate. A stamp with a component adhered to the stamp is provided. The component comprises a stamp side in contact with the stamp and a post side opposite the stamp side, a circuit, and connection posts extending from the post side. Each of the connection posts is electrically connected to the circuit. The component is pressed into contact with the adhesive layer to adhere the component to the destination substrate and to form a printed structure having a volume defined between the component and the destination substrate. The stamp is removed and the printed structure is processed to fill or reduce the volume.

A light emitting device package including a package body comprising a first opening; a light emitting device disposed in the first opening and including a first bonding part and a second bonding part; a first conductor disposed below the first bonding part; and a second conductor disposed below the second bonding part. Further, the first conductor is electrically connected to the first bonding part, and the second conductor is electrically connected to the second bonding part.

A light emitting device package including a package body comprising a first opening; a light emitting device disposed in the first opening and including a first bonding part and a second bonding part; a first conductor disposed below the first bonding part; and a second conductor disposed below the second bonding part. Further, the first conductor is electrically connected to the first bonding part, and the second conductor is electrically connected to the second bonding part.

A method for fabricating a copper pillar. The method includes forming a layer of titanium tungsten (TiW) over a semiconductor wafer, forming a layer of zinc (Zn) over the layer of TiW, and forming a copper pillar over the via. In addition, the method includes performing an anneal to diffuse the layer of Zn into the copper pillar. A semiconductor device that includes a layer of TiW coupled to a via of a semiconductor wafer and a copper pillar coupled to the layer of TiW. The copper pillar has interdiffused Zn within its bottom portion. Another method for fabricating a copper pillar includes forming a layer of TiW over a semiconductor wafer, forming a first patterned photoresist, forming a layer of Zn, and then removing the first patterned photoresist. The method further includes forming a second patterned photoresist and forming a copper pillar.

A method for fabricating a copper pillar. The method includes forming a layer of titanium tungsten (TiW) over a semiconductor wafer, forming a layer of zinc (Zn) over the layer of TiW, and forming a copper pillar over the via. In addition, the method includes performing an anneal to diffuse the layer of Zn into the copper pillar. A semiconductor device that includes a layer of TiW coupled to a via of a semiconductor wafer and a copper pillar coupled to the layer of TiW. The copper pillar has interdiffused Zn within its bottom portion. Another method for fabricating a copper pillar includes forming a layer of TiW over a semiconductor wafer, forming a first patterned photoresist, forming a layer of Zn, and then removing the first patterned photoresist. The method further includes forming a second patterned photoresist and forming a copper pillar.

An electronic package is provided, which is disposed with a second electronic component and a third electronic component on a first electronic component as a carrier structure, such that there is no need to match a layout size of the conventional package substrate. Therefore, the first electronic component can be designed as a System on a Chip (SoC) with a smaller size to improve the process yield.

An LED device includes: a first semiconductor layer of a first type; a second semiconductor layer of a second type; a light emitting layer formed between the first semiconductor layer and the second semiconductor layer and configured to emit light; and a filter formed on the second semiconductor layer and configured to transmit light in the second wavelength band within the first wavelength band. The filter includes a defect layer, first refractive layers, and second refractive layers having a refractive index greater than a refractive index of the first refractive layers, the first refractive layers and the second refractive layers are formed alternately on one side and other side of the defect layer. A thickness of the defect layer is determined based on a center wavelength of the first wavelength band, a peak wavelength of the second wavelength band and a refractive index of the defect layer.

An LED device includes: a first semiconductor layer of a first type; a second semiconductor layer of a second type; a light emitting layer formed between the first semiconductor layer and the second semiconductor layer and configured to emit light; and a filter formed on the second semiconductor layer and configured to transmit light in the second wavelength band within the first wavelength band. The filter includes a defect layer, first refractive layers, and second refractive layers having a refractive index greater than a refractive index of the first refractive layers, the first refractive layers and the second refractive layers are formed alternately on one side and other side of the defect layer. A thickness of the defect layer is determined based on a center wavelength of the first wavelength band, a peak wavelength of the second wavelength band and a refractive index of the defect layer.

There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.