Patent classifications
H01L2224/85411
SEMICONDUCTOR PACKAGES WITH PASS-THROUGH CLOCK TRACES AND ASSOCIATED SYSTEMS AND METHODS
Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.
SEMICONDUCTOR PACKAGES WITH PASS-THROUGH CLOCK TRACES AND ASSOCIATED SYSTEMS AND METHODS
Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.
Media shield with EMI capability for pressure sensor
Embodiments for a packaged semiconductor device and methods of making are provided herein, where a packaged semiconductor device includes a package body having a recess in which a pressure sensor is located; a polymeric gel within the recess that vertically and laterally surrounds the pressure sensor; and a media shield including at least one metal layer on a top surface of the polymeric gel, wherein the media shield and the polymeric gel are sufficiently flexible to transmit pressure to the pressure sensor.
Media shield with EMI capability for pressure sensor
Embodiments for a packaged semiconductor device and methods of making are provided herein, where a packaged semiconductor device includes a package body having a recess in which a pressure sensor is located; a polymeric gel within the recess that vertically and laterally surrounds the pressure sensor; and a media shield including at least one metal layer on a top surface of the polymeric gel, wherein the media shield and the polymeric gel are sufficiently flexible to transmit pressure to the pressure sensor.
COMPOSITE MEDIA PROTECTION FOR PRESSURE SENSOR
Embodiments for a packaged semiconductor device and methods of making are provided herein, where a packaged semiconductor device includes a package body having a recess in which a pressure sensor is exposed; a polymeric gel within the recess that vertically and laterally surrounds the pressure sensor; and a protection layer including a plurality of beads embedded within a top region of the polymeric gel.
COMPOSITE MEDIA PROTECTION FOR PRESSURE SENSOR
Embodiments for a packaged semiconductor device and methods of making are provided herein, where a packaged semiconductor device includes a package body having a recess in which a pressure sensor is exposed; a polymeric gel within the recess that vertically and laterally surrounds the pressure sensor; and a protection layer including a plurality of beads embedded within a top region of the polymeric gel.
MEDIA SHIELD WITH EMI CAPABILITY FOR PRESSURE SENSOR
Embodiments for a packaged semiconductor device and methods of making are provided herein, where a packaged semiconductor device includes a package body having a recess in which a pressure sensor is located; a polymeric gel within the recess that vertically and laterally surrounds the pressure sensor; and a media shield including at least one metal layer on a top surface of the polymeric gel, wherein the media shield and the polymeric gel are sufficiently flexible to transmit pressure to the pressure sensor.
MEDIA SHIELD WITH EMI CAPABILITY FOR PRESSURE SENSOR
Embodiments for a packaged semiconductor device and methods of making are provided herein, where a packaged semiconductor device includes a package body having a recess in which a pressure sensor is located; a polymeric gel within the recess that vertically and laterally surrounds the pressure sensor; and a media shield including at least one metal layer on a top surface of the polymeric gel, wherein the media shield and the polymeric gel are sufficiently flexible to transmit pressure to the pressure sensor.
Power amplifier modules including transistor with grading and semiconductor resistor
One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor element, leads, and an encapsulation resin covering a portion of each of the leads and the semiconductor element. Each of the leads includes an external connection portion projecting from a side surface of the encapsulation resin. The external connection portion of at least one of the leads has opposite ends in a width-wise direction that extends along the side surface of the encapsulation resin. The external connection portion includes two recesses arranged toward a center in the width-wise direction from the opposite ends. The two recesses extend from a distal surface toward the encapsulation resin. The opposite ends in the width-wise direction define an end connection part. The external connection portion includes a part between the two recesses defining a center connection part.