When a radio-frequency module is viewed in plan in a thickness direction of a mounting substrate, an electronic component overlaps an IC component. The electronic component includes four or more filters, each of which includes an input terminal and an output terminal. The IC component includes a first switch connected to the input terminals of at least four of the four or more filters and a second switch connected to the output terminals of the at least four filters. The input terminals of the at least four filters are in a first region including a center of the electronic component when viewed in plan in the thickness direction of the mounting substrate. The output terminals of the at least four filters are in a second region between the first region and a perimeter of the electronic component when viewed in plan in the thickness direction of the mounting substrate.

To provide a circuit module capable of reducing the influence of noise transmitted through a shield film on an inductor mounted on a substrate. A circuit module according to the present disclosure includes a substrate, an inductor mounted on a surface of the substrate, a sealing resin provided on the surface of the substrate and covering the inductor, a conductive shield film covering the sealing resin, and a wire disposed between the inductor on the surface of the substrate and the side film of the shield film. The one end portion of the wire is electrically connected to the side film. The other end portion of the wire is electrically connected to the surface of the substrate. In plan view, an imaginary straight line passing through the one end portion and the other end portion of the wire is inclined with respect to the side film.

A high-frequency module includes a semiconductor element, a first insulating layer, an acoustic wave element, a second insulating layer, a first intermediate layer, and a second intermediate layer. The first intermediate layer is interposed between the acoustic wave element and the semiconductor element, and has a thermal conductivity lower than the first and second insulating layers. The second intermediate layer is interposed between the first insulating layer and the second insulating layer, and has a thermal conductivity lower than the first and second insulating layers. A step is provided between a first principal surface of the first insulating layer and one principal surface of the semiconductor element. The distance between first and second principal surfaces of the first insulating layer is greater than the distance between the second principal surface of the first insulating layer and the one principal surface of the semiconductor element.

A high-frequency module includes a mounting substrate, electronic components, a sealing resin, and land conductors. The mounting substrate includes a front surface, a rear surface, and a side surface. The land conductors are provided on the rear surface. The electronic components are mounted on the front surface of the mounting substrate. A distance between the mounting surface of the land conductor near the side surface and the rear surface of the mounting substrate is larger than a distance between the mounting surface of the land conductor closer to the center than the land conductor near the side surface and the rear surface of the mounting substrate.

Radio-frequency (RF) switching devices having improved voltage handling capability. In some embodiments, a switching device can include a first terminal and a second terminal, and a plurality of switching elements connected in series to form a stack between the first terminal and the second terminal. The switching elements can have a non-uniform distribution of a parameter that results in the stack having a first voltage handling capacity that is greater than a second voltage handling capacity corresponding to a similar stack having a substantially uniform distribution of the parameter.

A high-frequency module includes a semiconductor element, a first insulating layer, an acoustic wave element, a second insulating layer, a first intermediate layer, and a second intermediate layer. The first intermediate layer is interposed between the acoustic wave element and the semiconductor element, and has a thermal conductivity lower than the first and second insulating layers. The second intermediate layer is interposed between the first insulating layer and the second insulating layer, and has a thermal conductivity lower than the first and second insulating layers. A step is provided between a first principal surface of the first insulating layer and one principal surface of the semiconductor element. The distance between first and second principal surfaces of the first insulating layer is greater than the distance between the second principal surface of the first insulating layer and the one principal surface of the semiconductor element.

A dual sided molded package has a substrate with pads of varying size configured to receive electrically conductive interconnect members thereon. The pads include first pads that have a larger surface area than a surface area of second pads. In one implementation, one or more first pads are proximate the corners of the substrate. First interconnect members are attached to the first pads and second interconnect members are attached to the second pads. The first interconnect members have an exposed solderable area that is substantially equal to the surface area of the first pads, and the second interconnect members have an exposed solderable area that is substantially equal to the surface area of the second pads. The first exposed solderable area is larger than the second exposed solderable area.

One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.

A semiconductor-on-insulator die includes a substrate layer, an active layer, an insulator layer between the substrate layer and the active layer, a first metal layer, and a first via layer between the active layer and the first metal layer. The die includes at least one contact pad and a transistor including a first terminal formed within the active layer. A conduction path can include a plurality of first conduction path portions extending between the first terminal and the at least one contact pad and residing within a footprint of the at least one contact pad.

A dual sided molded package has a substrate with pads of varying size configured to receive electrically conductive interconnect members thereon. The pads include first pads that have a larger surface area than a surface area of second pads. In one implementation, one or more first pads are proximate the corners of the substrate. First interconnect members are attached to the first pads and second interconnect members are attached to the second pads. The first interconnect members have an exposed solderable area that is smaller than the surface area of the first pads, and the second interconnect members have an exposed solderable area that is substantially equal to the surface area of the second pads. The first exposed solderable area is substantially equal to the second exposed solderable area.